Cooperative spontaneous emission of excitons in the semiconductor microcavity

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Cooperative spontaneous emission of excitons in the semiconductor microcavity
	Liu S; Lin SM; Wang QM; Liu S Chinese Academe Inst Semicond Natl Optoelect Integrat Lab Beijing 100083 Peoples R China.
	2000
会议名称	Conference on Vertical-Cavity Surface-Emitting Lasers IV
会议录名称	VERTICAL-CAVITY SURFACE-EMITTING LASERS IV, 3946
页码	136-141
会议日期	JAN 26-28, 2000
会议地点	SAN JOSE, CA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3563-5
部门归属	chinese academe, inst semicond, natl optoelect integrat lab, beijing 100083, peoples r china
摘要	We have studied the spontaneous emission of polarized excitons in the GaInP/AlGaInP VCSEL from 30K to room temperature. It is observed that the spontaneous emission peak enters and leaves the resonant regime. At the resonant regime, the emission intensities of the perpendicular and horizontal polarized exciton are enhanced at different ratio to those in non-resonant regime. These experiment results are explained through the dressed exciton theory of the semiconductor microcavity device. From this theory, the intensity enhancement and the polarization dependence are understood as cooperative emission and the microcavity anisotropy.
关键词	Spontaneous Emission Microcavity Anisotropy Polarized Exciton Surface-emitting Lasers Polariton Photoluminescence Cavity Operation
学科领域	光电子学
主办者	SPIE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13773
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liu S Chinese Academe Inst Semicond Natl Optoelect Integrat Lab Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Liu S,Lin SM,Wang QM,et al. Cooperative spontaneous emission of excitons in the semiconductor microcavity[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2000:136-141.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
2939.pdf（237KB）			限制开放	--	请求全文