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Mossbauer spectroscopy study of Fe-57 in R3Fe29-xTx (R=Y, Ce, Nd, Sm, Gd, Tb and Dy; T=V and Cr) 会议论文
MAGNETISM, MAGNETIC MATERIALS AND THEIR APPLICATIONS, 302-3, SAO PAULO, BRAZIL, JUN 07-11, 1998
作者:  Nagamine LCCM;  Azevedo IS;  Baggio-Saitovitch E;  Rechenberg HR;  Han XF;  Lin LY;  Nagamine LCCM Ctr Brasileiro Pesquisas Fis Rua Xavier Sigaud 150 BR-22290180 Rio De Janeiro Brazil.
Adobe PDF(374Kb)  |  收藏  |  浏览/下载：1062/158  |  提交时间：2010/11/15
Fe-57 Mossbauer Spectra  Magnetic Properties  Hyperfine Field  R3fe29-xtx  Fe Magnetic Moment  Magnetic-properties  
Fe-57 Mossbauer spectroscopic and magnetic studies of R3Fe29-xVx (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy) 会议论文
HYPERFINE INTERACTIONS, 121 (1-8), DURBAN, SOUTH AFRICA, AUG 23-28, 1998
作者:  Nagamine LCCM;  Baggio-Saitovitch E;  Azevedo IS;  Han XF;  Lin LY;  Rechenberg R;  Nagamine LCCM Ctr Brasileiro Pesquisas Fis Rua Dr Xavier Sigaud 150 Rio De Janeiro Brazil.
Adobe PDF(64Kb)  |  收藏  |  浏览/下载：1261/235  |  提交时间：2010/11/15
Nitride  Cr  
Crystallographic and magnetic properties of hydride R3Fe29-xTxHy (R=Y, Ce, Nd, Sm, Gd, Tb and Dy; T=V and Cr) 会议论文
MAGNETISM, MAGNETIC MATERIALS AND THEIR APPLICATIONS, 302-3, SAO PAULO, BRAZIL, JUN 07-11, 1998
作者:  Han XF;  Lin LY;  Baggio-Saitovitch E;  Xu RG;  Wang XH;  Pan HG;  Han XF Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(391Kb)  |  收藏  |  浏览/下载：1167/161  |  提交时间：2010/11/15
Magnetic Properties  Hydride  Hydrogenation  Saturation Magnetization  Curie Temperature  First-order Magnetization Process  R3fe29-xtxhy  r = y  
Iron related emission spectra in InP 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Chang Y;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(153Kb)  |  收藏  |  浏览/下载：1339/383  |  提交时间：2010/10/29
Absorption-spectroscopy  Fe  
On the nature of iron in InP: A FTIR study 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Han YJ;  Liu XL;  Lao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(167Kb)  |  收藏  |  浏览/下载：1297/265  |  提交时间：2010/10/29
Iron  Phonon Sideband  Semi-insulating  Inp  
Dynamics of formation of defects in annealed InP 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(208Kb)  |  收藏  |  浏览/下载：1240/387  |  提交时间：2010/10/29
Defects Formation  Hydrogen Related Defects  Semi-insulating  Inp  
Formation mechanism of defects in annealed InP 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES, 3419, TAIPEI, TAIWAN, JUL 09-11, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(383Kb)  |  收藏  |  浏览/下载：1170/254  |  提交时间：2010/10/29
Defects Formation  Hydrogen Related Defects  Semi-insulating  Inp  
The role of hydrogen in semi-insulating INP 会议论文
HYDROGEN IN SEMICONDUCTORS AND METALS, 513, SAN FRANCISCO, CA, APR 13-17, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Qian JJ;  Chen YH;  Wang ZG;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1030/0  |  提交时间：2010/10/29
Hydrogen related defects in InP 会议论文
PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS, 98 (2), SAN DIEGO, CA, MAY 03-08, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(259Kb)  |  收藏  |  浏览/下载：1272/172  |  提交时间：2010/10/29
Twin and grain boundary in InP: A synchrotron radiation study 会议论文
APPLICATIONS OF SYNCHROTRON RADIATION TECHNIQUES TO MATERIALS SCIENCE IV, 524, SAN FRANCISCO, CA, APR 13-17, 1998
作者:  Han YJ;  Jiang JH;  Wang ZG;  Liu XL;  Jiao JH;  Tian YL;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1042Kb)  |  收藏  |  浏览/下载：1093/178  |  提交时间：2010/10/29