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A novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS:OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Zhang RY;  Dong J;  Zhou F;  Zhu HL;  Shu HY;  Bian J;  Wang LF;  Tian HL;  Wang W;  Zhang RY Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(413Kb)  |  收藏  |  浏览/下载：1402/338  |  提交时间：2010/10/29
Spot-size Converter  Gain  
Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition 会议论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2), DENVER, COLORADO, JUL 16-20, 2001
作者:  Sun XL;  Yang H;  Zhu JJ;  Wang YT;  Chen Y;  Li GH;  Wang ZG;  Sun XL Ohio State Univ Dept Elect Engn Columbus OH 43210 USA.
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：1378/285  |  提交时间：2010/11/15
Gallium Nitride  Luminescence  Bulk