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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [9]
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李运涛 [1]
李智勇 [1]
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会议论文 [9]
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发表日期:2005
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Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O
会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:
Zhao, Q
;
Pan, JQ
;
Zhang, J
;
Zhou, GT
;
Wu, J
;
Wang, LF
;
Wang, W
;
Zhao, Q, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(181Kb)
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浏览/下载:1503/337
  |  
提交时间:2010/03/29
Selective-area Growth
Ultra-low-pressure
Integrated Optoelectronics
Optical Pulse Generation
Ring Laser
Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V
会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:
Zhang, SJ
;
Wen, JM
;
Song, HP
;
Zhu, NH
;
Zhang, SJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)
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浏览/下载:1435/423
  |  
提交时间:2010/03/29
Semiconductor Laser Diode
Subtraction Method
Scattering Parameters
Intrinsic Response
Thermal Effect
Frequency-response
Metal-free growth of Si/SiO2 nanowires by annealing SiOx (x < 2) films deposited by PECVD
会议论文
Group-IV Semiconductor Nanostructures丛书标题: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, Boston, MA, NOV 29-DEC 02, 2004
作者:
Wang, XX
;
Zhang, JG
;
Wang, QM
;
Wang, XX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(394Kb)
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收藏
  |  
浏览/下载:1201/189
  |  
提交时间:2010/03/29
Silicon Nanowires
Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation
会议论文
SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Beijing, PEOPLES R CHINA, NOV 09-11, 2004
作者:
Xu Y
;
Zhu XP
;
Gan QQ
;
Song GF
;
Cao Q
;
Guo, L
;
Li YZ
;
Chen LH
;
Xu, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(77Kb)
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收藏
  |  
浏览/下载:1481/324
  |  
提交时间:2010/03/29
Valence Band Mixing
Small-signal and large-signal performance test of high-speed optoelectronics devices
会议论文
SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Beijing, PEOPLES R CHINA, NOV 09-11, 2004
作者:
Zhu NH
;
Chen C
;
Sun JW
;
Pun EYB
;
Chung PS
;
Zhu, NH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(403Kb)
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收藏
  |  
浏览/下载:1445/396
  |  
提交时间:2010/03/29
Scattering Parameters
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
会议论文
2005 International Conference on Indium Phosphide and Related Materials丛书标题: CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS, Glasgow, SCOTLAND, MAY 08-12, 2005
作者:
Zhao, YW
;
Dong, ZY
;
Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.
Adobe PDF(638Kb)
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  |  
浏览/下载:1603/383
  |  
提交时间:2010/03/29
Encapsulated Czochralski Inp
Semiconductor Compound-crystals
Stimulated Current Spectroscopy
Current Transient Spectroscopy
Deep-level Defects
Annealing Ambient
Point-defects
Fe
Phosphide
Donors
Recent progresses of SOI-based photonic devices - art. no. 60201R
会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:
Yu JZ
;
Chen SW
;
Li ZY
;
Chen YY
;
Sun F
;
Li YT
;
Li YP
;
Liu JW
;
Yang D
;
Xia JS
;
Li CB
;
Wang QM
;
Yu, JZ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(442Kb)
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收藏
  |  
浏览/下载:1785/362
  |  
提交时间:2010/03/29
Soi
Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells
会议论文
SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Beijing, PEOPLES R CHINA, NOV 09-11, 2004
作者:
Xu Y
;
Zhu XP
;
Song GF
;
Cao Q
;
Guo L
;
Li YZ
;
Chen LH
;
Xu, Y, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(78Kb)
  |  
收藏
  |  
浏览/下载:1580/491
  |  
提交时间:2010/03/29
Quantum Well Intermixing
Influence of mode symmetry on quality factors of degenerate states in microlasers with an equilateral triangle resonator
会议论文
SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Beijing, PEOPLES R CHINA, NOV 09-11, 2004
作者:
Chen Q
;
Huang YZ
;
Guo WH
;
Chen, Q, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(306Kb)
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收藏
  |  
浏览/下载:1469/274
  |  
提交时间:2010/03/29
Microcavity