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Two-dimensional numerical simulation of the channel electron in an In0.52Al0.48As/In0.53Ga0.48As HEMT 会议论文
1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, HONG KONG, HONG KONG, 35672
作者:  Zhang XH;  Yang YF;  Wang ZG;  Zhang XH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(211Kb)  |  收藏  |  浏览/下载：1046/246  |  提交时间：2010/10/29
The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:  Wang ZM;  Feng SL;  Lu ZD;  Zhao Q;  Yang XP;  Chen ZG;  Xu ZY;  Zheng HZ;  Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(2780Kb)  |  收藏  |  浏览/下载：1229/142  |  提交时间：2010/11/15
Growth  Interdiffusion  Islands  Scale  
Electronic investigation of self-organized InAs quantum dots 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:  Chen F;  Feng SL;  Yang XZ;  Zhao Q;  Wang ZM;  Wen LS;  Chen F Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(2402Kb)  |  收藏  |  浏览/下载：1015/127  |  提交时间：2010/11/15
Carrier Relaxation  
Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:  Wang ZM;  Feng SL;  Yang XP;  Deng YM;  Lu ZD;  Xu ZY;  Chen ZG;  Zheng HZ;  Han PD;  Wang FL;  Duan XF;  Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(2139Kb)  |  收藏  |  浏览/下载：1264/149  |  提交时间：2010/11/15
Gaas  Growth  
Material transport in self-assembled InAs/GaAs quantum dot ensemble 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:  Wang ZM;  Feng SL;  Yang XP;  Lu ZD;  Xu ZY;  Chen ZG;  Zheng HZ;  Wang FL;  Gao M;  Han PD;  Duan XF;  Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(2906Kb)  |  收藏  |  浏览/下载：1318/171  |  提交时间：2010/11/15
Growth  Transition  Gaas  
Heteroepitaxy of cubic GaN: influence of interface structure 会议论文
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, (157), OXFORD, ENGLAND, APR 07-10, 1997
作者:  Trampert A;  Brandt O;  Yang H;  Yang B;  Ploog KH;  Trampert A Paul Drude Inst Festkorperelekt Hausvogteipl 5-7 D-10117 Berlin Germany.
Adobe PDF(317Kb)  |  收藏  |  浏览/下载：1308/219  |  提交时间：2010/11/15
Molecular-beam Epitaxy  Gan/gaas(001)  Growth