Heteroepitaxy of cubic GaN: influence of interface structure

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Heteroepitaxy of cubic GaN: influence of interface structure
	Trampert A; Brandt O; Yang H; Yang B; Ploog KH; Trampert A Paul Drude Inst Festkorperelekt Hausvogteipl 5-7 D-10117 Berlin Germany.
	1997
会议名称	Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
会议录名称	MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, (157)
页码	205-208
会议日期	APR 07-10, 1997
会议地点	OXFORD, ENGLAND
出版地	TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX
出版者	IOP PUBLISHING LTD
ISSN	0951-3248
ISBN	0-7503-0464-2
部门归属	paul drude inst festkorperelekt, d-10117 berlin, germany; chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	We report on the epitaxial growth and the microstructure of cubic GaN. The layers are deposited by plasma-assisted molecular beam epitaxy on GaAs and Si substrates. Despite the extreme lattice mismatch between these materials, GaN grows in the metastable cubic phase with a well-defined orientation-relationship to the GaAs substrate including a sharp heteroboundary. The preference of the metastable phase and its epitaxial orientation originates in the interface structure which is found to be governed by a coincidence site lattice.
关键词	Molecular-beam Epitaxy Gan/gaas(001) Growth
学科领域	半导体物理
主办者	Royal Microscop Soc.; Inst Phys, Electron Microscopy & Anal Grp.; Mat Res Soc.; Royal Soc.; JEOL UK Ltd.; Oxford Instruments Ltd.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15099
专题	中国科学院半导体研究所（2009年前）
通讯作者	Trampert A Paul Drude Inst Festkorperelekt Hausvogteipl 5-7 D-10117 Berlin Germany.
推荐引用方式 GB/T 7714	Trampert A,Brandt O,Yang H,et al. Heteroepitaxy of cubic GaN: influence of interface structure[C]. TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX:IOP PUBLISHING LTD,1997:205-208.

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