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无权访问的条目 期刊论文
作者:  Chen P;  Tu XG;  Li SP;  Li JC;  Lin W;  Chen HY;  Liu DY;  Kang JY;  Zuo YH;  Zhao L;  Chen SW;  Yu YD;  Yu, JZ;  Wang QM;  Chen, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: pchen@semi.ac.cn
Adobe PDF(173Kb)  |  收藏  |  浏览/下载：1049/277  |  提交时间：2010/03/29
无权访问的条目 期刊论文
作者:  Li GH;  Su FH;  Wang WJ;  Ding K;  Chen W;  Liu YF;  Joly AG;  Li, GH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: ghli@red.semi.ac.cn;  weichen@uta.edu
Adobe PDF(224Kb)  |  收藏  |  浏览/下载：1136/341  |  提交时间：2010/03/29
Kinetic Monte Carlo simulation of semiconductor quantum dot growth 会议论文
Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA, Beijing, PEOPLES R CHINA, JUN 09-11, 2005
作者:  Zhao C;  Chen YH;  Sun J;  Lei W;  Cui CX;  Yu LK;  Li K;  Wang ZG;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(3368Kb)  |  收藏  |  浏览/下载：1631/327  |  提交时间：2010/03/29
Monte Carlo Simulation  
无权访问的条目 期刊论文
作者:  Zhang, WT (Zhang, W. T.);  Li, F (Li, F.);  Liu, YL (Liu, Y. L.);  Liu, LH (Liu, L. H.);  Zhang, WT, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: zhangwt@semi.ac.cn;  lifang@semi.ac.cn
Adobe PDF(273Kb)  |  收藏  |  浏览/下载：1025/467  |  提交时间：2010/03/29
无权访问的条目 期刊论文
作者:  Zhang, XW (Zhang, X. W.);  Fan, WJ (Fan, W. J.);  Li, SS (Li, S. S.);  Xia, JB (Xia, J. B.);  Zhang, XW, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg
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Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Zhao, YM (Zhao, Y. M.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1318Kb)  |  收藏  |  浏览/下载：1383/197  |  提交时间：2010/03/29
Micro-raman  4h-sic  Defects  3c-inclusions  Triangle-shaped Inclusion  Epitaxial Layers  Silicon-carbide  
无权访问的条目 期刊论文
作者:  Yang SG (Yang Sigang);  Zhang YJ (Zhang Yejin);  Li JY (Li Jinyan);  Chen W (Chen Wei);  He LN (He Lina);  Xie SZ (Xie Shizhong);  Yang, SG, Tsing Hua Univ, Dept Elect Engn, Beijing 100084, Peoples R China. 电子邮箱地址: ysg03@mails.tsinghua.edu.cn;  yjzhang@semi.ac.cn;  ljy@fiberhome.com.cn;  chenwei@fiberhome.com.cn;  heln@mails.tsinghua.edu.cn;  xsz-dee@mail.tsinghua.edu.cn
Adobe PDF(403Kb)  |  收藏  |  浏览/下载：1342/333  |  提交时间：2010/03/29
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Sun, G (Sun, Guosheng);  Ning, J (Ning, Jin);  Liu, X (Liu, Xingfang);  Zhao, Y (Zhao, Yongmei);  Li, J (Li, Jiaye);  Wang, L (Wang, Lei);  Zhao, W (Zhao, Wanshun);  Wang, L (Wang, Liang);  Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)  |  收藏  |  浏览/下载：1458/222  |  提交时间：2010/03/29
Polycrystalline 3c-sic  Resonator  Doping  Silicon-carbide  
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Zhao, YM (Zhao, Y. M.);  Ning, J (Ning, J.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Li, JM (Li, J. M.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(908Kb)  |  收藏  |  浏览/下载：1172/198  |  提交时间：2010/03/29
Homoepitaxy  4h-sic  Multi-epilayer  Uv Detection  p(+)-pi-n(-)  Ultraviolet Photodetector  Epitaxial-growth  
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Ning, J (Ning, J.);  Zhao, YM (Zhao, Y. M.);  Luo, MC (Luo, M. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(209Kb)  |  收藏  |  浏览/下载：1312/273  |  提交时间：2010/03/29
Avalanche Photodiodes  Area