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Photoluminescence mechanism of Si nanocrystals embedded in SiO2 matrix 会议论文
2006 3rd IEEE International Conference on Group IV Photonics, Ottawa, CANADA, SEP 13-15, 2006
作者:  Wang XX (Wang Xiaoxin);  Cheng BW (Cheng Buwen);  Yu JZ (Yu Jinzhong);  Wang QM (Wang Qiming);  Wang, XX, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(275Kb)  |  收藏  |  浏览/下载：1723/318  |  提交时间：2010/03/29
Porous Silicon  
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well 会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:  Ying-Qiang X;  Zhang W;  Niu ZC;  Wu RG;  Wang QM;  Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)  |  收藏  |  浏览/下载：1732/495  |  提交时间：2010/10/29
Ganas  Sio2 Encapsulation  Rapid-thermal-annealing  Nitrogen Reorganization  Molecular-beam Epitaxy  Optical-properties  Mu-m  
Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD) 会议论文
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 95-96, BERLIN, GERMANY, SEP 21-26, 2003
作者:  Yu JZ;  Li C;  Cheng BW;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: jzyu@red.semi.ac.cn
Adobe PDF(459Kb)  |  收藏  |  浏览/下载：1336/218  |  提交时间：2010/11/15
Dbr (Distributed Bragg Reflector)  Mqw (Multiple Quantum Wells)  Optical Fiber Communication  Photodiode  Rce-pd (Resonant-cavity-enhanced Photodiode)  Responsivity  Sige/si  Soi  
Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodetectors (RCE-PD) for application in optical fiber communication network 会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:  Wang QM;  Li C;  Cheng BW;  Yang QQ;  Lei ZL;  Yu JZ;  Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(119Kb)  |  收藏  |  浏览/下载：1253/233  |  提交时间：2010/10/29
Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Yu JZ;  Huang CJ;  Cheng BW;  Zuo YH;  Luo LP;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1587Kb)  |  收藏  |  浏览/下载：1224/164  |  提交时间：2010/11/15
Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Xu YQ;  Li LH;  Pan Z;  Lin YW;  Wang QM;  Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(157Kb)  |  收藏  |  浏览/下载：1267/221  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Mu-m  
Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors 会议论文
50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS, LAS VEGAS, NV, MAY 21-24, 2000
作者:  Li C;  Yang QQ;  Ou HY;  Wang QM;  Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1572/439  |  提交时间：2010/10/29
Mirrors  
Mechanism on exciton-mediated energy transfer in erbium-doped silicon 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Lei HB;  Yang QQ;  Ou HY;  Wang QM;  Lei HB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(229Kb)  |  收藏  |  浏览/下载：1352/251  |  提交时间：2010/11/15
Er-doped Silicon  Photoluminescence  Energy Transfer  Al2o3 Wave-guides  Er  Electroluminescence  Epitaxy  Gaas  
The fabrication of thick SiO2 layer by anodization 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Ou HY;  Yang QQ;  Lei HB;  Wang QM;  Hu XW;  Ou HY Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(185Kb)  |  收藏  |  浏览/下载：1424/369  |  提交时间：2010/11/15
Thick Sio2 Layer  Porous Silicon  Sio2/si Waveguide Device  Wave-guides  Silicon  
A model of dislocations at the interface of the bonded wafers 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Han WH;  Yu JZ;  Wang LC;  Wei HZ;  Zhang XF;  Wang QM;  Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(76Kb)  |  收藏  |  浏览/下载：1632/266  |  提交时间：2010/10/29
Wafer Bonding  Heteroepitaxy  Lattice Mismatch  Edge-like Dislocations  Thermal Stress  60 Degrees Dislocation Lines  Gaas