Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system
Yu JZ; Huang CJ; Cheng BW; Zuo YH; Luo LP; Wang QM; Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
2002
会议名称Symposium on Silicon-based Heterostructure Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002)
会议录名称INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29)
页码4228-4233
会议日期JUN 10-14, 2002
会议地点XIAN, PEOPLES R CHINA
出版地JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE
出版者WORLD SCIENTIFIC PUBL CO PTE LTD
ISSN0217-9792
部门归属chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range.
学科领域光电子学
主办者Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; China Assoc Sci & Technol.; Chinese Acad Sci.; Chinese Acad Engn.; Govt Shaanxi Province & Xian City.; China Electr Mat Assoc.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/14867
专题中国科学院半导体研究所(2009年前)
通讯作者Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Yu JZ,Huang CJ,Cheng BW,et al. Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system[C]. JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2002:4228-4233.
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