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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
;
Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)
  |  
收藏
  |  
浏览/下载:1732/495
  |  
提交时间:2010/10/29
Ganas
Sio2 Encapsulation
Rapid-thermal-annealing
Nitrogen Reorganization
Molecular-beam Epitaxy
Optical-properties
Mu-m
Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)
会议论文
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 95-96, BERLIN, GERMANY, SEP 21-26, 2003
作者:
Yu JZ
;
Li C
;
Cheng BW
;
Wang QM
;
Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: jzyu@red.semi.ac.cn
Adobe PDF(459Kb)
  |  
收藏
  |  
浏览/下载:1337/218
  |  
提交时间:2010/11/15
Dbr (Distributed Bragg Reflector)
Mqw (Multiple Quantum Wells)
Optical Fiber Communication
Photodiode
Rce-pd (Resonant-cavity-enhanced Photodiode)
Responsivity
Sige/si
Soi
Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodetectors (RCE-PD) for application in optical fiber communication network
会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:
Wang QM
;
Li C
;
Cheng BW
;
Yang QQ
;
Lei ZL
;
Yu JZ
;
Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(119Kb)
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  |  
浏览/下载:1253/233
  |  
提交时间:2010/10/29
Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system
会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:
Yu JZ
;
Huang CJ
;
Cheng BW
;
Zuo YH
;
Luo LP
;
Wang QM
;
Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1587Kb)
  |  
收藏
  |  
浏览/下载:1226/164
  |  
提交时间:2010/11/15
Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Xu YQ
;
Li LH
;
Pan Z
;
Lin YW
;
Wang QM
;
Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(157Kb)
  |  
收藏
  |  
浏览/下载:1267/221
  |  
提交时间:2010/10/29
Molecular-beam Epitaxy
Mu-m
Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors
会议论文
50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS, LAS VEGAS, NV, MAY 21-24, 2000
作者:
Li C
;
Yang QQ
;
Ou HY
;
Wang QM
;
Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(305Kb)
  |  
收藏
  |  
浏览/下载:1572/439
  |  
提交时间:2010/10/29
Mirrors
Mechanism on exciton-mediated energy transfer in erbium-doped silicon
会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Lei HB
;
Yang QQ
;
Ou HY
;
Wang QM
;
Lei HB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(229Kb)
  |  
收藏
  |  
浏览/下载:1352/251
  |  
提交时间:2010/11/15
Er-doped Silicon
Photoluminescence
Energy Transfer
Al2o3 Wave-guides
Er
Electroluminescence
Epitaxy
Gaas
The fabrication of thick SiO2 layer by anodization
会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Ou HY
;
Yang QQ
;
Lei HB
;
Wang QM
;
Hu XW
;
Ou HY Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(185Kb)
  |  
收藏
  |  
浏览/下载:1424/369
  |  
提交时间:2010/11/15
Thick Sio2 Layer
Porous Silicon
Sio2/si Waveguide Device
Wave-guides
Silicon
A model of dislocations at the interface of the bonded wafers
会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:
Han WH
;
Yu JZ
;
Wang LC
;
Wei HZ
;
Zhang XF
;
Wang QM
;
Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(76Kb)
  |  
收藏
  |  
浏览/下载:1632/266
  |  
提交时间:2010/10/29
Wafer Bonding
Heteroepitaxy
Lattice Mismatch
Edge-like Dislocations
Thermal Stress
60 Degrees Dislocation Lines
Gaas
Normal-incident SiGe/Si MQWs photodetectors operating at 1.3 mu m
会议论文
PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899, SINGAPORE, SINGAPORE, DEC 01-03, 1999
作者:
Cheng BW
;
Li C
;
Yang QQ
;
Wang HJ
;
Luo LP
;
Yu JZ
;
Wang QM
;
Cheng BW Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(176Kb)
  |  
收藏
  |  
浏览/下载:1272/229
  |  
提交时间:2010/10/29
Sige/si
Mqws
Photodetector
1.3 Mu-m
Si/sio2