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Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2), GUILDFORD, ENGLAND, AUG 05-08, 2002
作者:  Li GH;  Fang ZL;  Su FH;  Ma BS;  Ding K;  Han HX;  Sou IK;  Ge WK;  Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(179Kb)  |  收藏  |  浏览/下载：1462/261  |  提交时间：2010/11/15
Optical-absorption  Zns-te  Transition  Edge  
Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy 会议论文
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, SHANGHAI, PEOPLES R CHINA, OCT 22-25, 2001
作者:  Lu LW;  Ge WK;  Sou IK;  Wang J;  Lu LW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB912 Beijing 100083 Peoples R China.
Adobe PDF(155Kb)  |  收藏  |  浏览/下载：1502/306  |  提交时间：2010/10/29
Znste  
Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates 会议论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 18 (4), SALT LAKE CITY, UTAH, JAN 16-20, 2000
作者:  Yang Z;  Sou IK;  Chen YH;  Yang Z Hong Kong Univ Sci & Technol Adv Mat Res Inst Clearwater Bay Kowloon Hong Kong Peoples R China.
Adobe PDF(59Kb)  |  收藏  |  浏览/下载：1061/199  |  提交时间：2010/11/15
Reflectance Difference Spectroscopy  Znse/gaas Interface  States  Gaas  
Pressure behavior of deep centers in ZnSxTe1-x alloys 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 211 (1), THESSALONIKI, GREECE, AUG 09-13, 1998
作者:  Liu NZ;  Li GH;  Zhang W;  Zhu ZM;  Han HX;  Wang ZP;  Ge WK;  Sou IK;  Liu NZ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1190/186  |  提交时间：2010/11/15
Absorption-edge  Strains  Zns