中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共12条，第1-10条 帮助

限定条件        
已选(0)清除 条数/页：   排序方式：
Ring defect photonic crystal vertical cavity surface emitting laser based on coherent coupling 会议论文
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009): 841-842 2009, Hong Kong, PEOPLES R CHINA, JUL 13-17, 2009
作者:  Liu AJ (Liu Anjin);  Qu HW (Qu Hongwei);  Chen W (Chen Wei);  Xing MX (Xing Mingxin);  Zhou WJ (Zhou Wenjun);  Zheng WH (Zheng Wanhua)
Adobe PDF(183Kb)  |  收藏  |  浏览/下载：1710/451  |  提交时间：2011/07/14
High efficient and tunable edge emitting microlaser on photonic crystal slab 会议论文
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009): 114-115 2009, Hong Kong, PEOPLES R CHINA, JUL 13-17, 2009
作者:  Zheng WH (Zheng Wanhua);  Xing MX (Xing Mingxin);  Chen W (Chen Wei);  Zhou WJ (Zhou Wenjun);  Liu AJ (Liu Anjin);  Wang HL (Wang Hailing);  Chen LH (Chen Lianghui)
Adobe PDF(583Kb)  |  收藏  |  浏览/下载：1447/230  |  提交时间：2011/07/14
High polarization single dipole mode photonic crystal microlaser 会议论文
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009): 843-844 2009, Hong Kong, PEOPLES R CHINA, JUL 13-17, 2009
作者:  Chen W (Chen Wei);  Xing MX (Xing Mingxin);  Zhou WJ (Zhou Wenjun);  Liu AJ (Liu Anjin);  Chen LH (Chen Lianghui);  Zheng WH (Zheng Wanhua)
Adobe PDF(226Kb)  |  收藏  |  浏览/下载：1534/250  |  提交时间：2011/07/14
Single dipole mode photonic crystal laser on InGaAsP/InP QW waveguide slab - art. no. 698436 会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
作者:  Zheng WH;  Xing MX;  Ren G;  Du XY;  Wang K;  Chen LH;  Zheng, WH, CAS, Inst Semicond, Nanooptoelect Lab, Beijing, Peoples R China.
Adobe PDF(313Kb)  |  收藏  |  浏览/下载：1686/254  |  提交时间：2010/03/09
Photonic Crystal  
Structure and visible luminescence of ZnO nanoparticles 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Peng, WQ (Peng, W. Q.);  Qu, SC (Qu, S. C.);  Cong, GW (Cong, G. W.);  Wang, ZG (Wang, Z. G.);  Peng, WQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wqpeng@semi.ac.cn
Adobe PDF(139Kb)  |  收藏  |  浏览/下载：1900/624  |  提交时间：2010/03/29
Nanoparticles  
Defect influence on luminescence efficiency of GaN-based LEDs 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Li SP (Li Shuping);  Fang ZL (Fang Zhilai);  Chen HY (Chen Hangyang);  Li JC (Li Jinchai);  Chen XH (Chen Xiaohong);  Yuan XL (Yuan Xiaoli);  Sekiguchi T (Sekiguchi Takashi);  Wang QM (Wang Qiming);  Kang JY (Kang Junyong);  Kang, JY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. 电子邮箱地址: jykang@xmu.edu.cn
Adobe PDF(142Kb)  |  收藏  |  浏览/下载：1427/288  |  提交时间：2010/03/29
Defects  
Dipole mode photonic crystal point defect laser on InGaAsP/InP 会议论文
JOURNAL OF CRYSTAL GROWTH, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:  Zheng WH;  Ren G;  Ma XT;  Cai XH;  Chen LH;  Nozaki K;  Baba T;  Zheng, WH, Chinese Acad Sci, Inst Semicond, Nano Optoelect Lab, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: whzheng@red.semi.ac.cn
Adobe PDF(147Kb)  |  收藏  |  浏览/下载：1317/264  |  提交时间：2010/03/29
Dipole Mode  
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 6 (5-6), Sendai, JAPAN, MAR 20-22, 2003
作者:  Leung BH;  Fong WK;  Surya C;  Lu LW;  Ge WK;  Surya C Hong Kong Polytech Univ Photon Res Ctr Dept Elect & Informat Engn Hong Kong Hong Kong Peoples R China. 电子邮箱地址: ensurya@polyu.edu.hk
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1400/281  |  提交时间：2010/10/29
Gan  Low-frequency Noise  Deep Levels  Deep Level Transient Fourier Spectroscopy  Devices  
Characterization of diphasic nc-Si/a-Si : H thin films and solar cells 会议论文
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, NEW ORLEANS, LA, MAY 19-24, 2002
作者:  Zhang SB;  Xu YY;  Hu ZH;  Wang YQ;  Zeng XB;  Diao HW;  Wang WJ;  Kong GL;  Liao XB;  Zhang SB Chinese Acad Sci Inst Semicond State Lab Surface Phys Beijing 100083 Peoples R China.
Adobe PDF(236Kb)  |  收藏  |  浏览/下载：1449/381  |  提交时间：2010/10/29
Silicon  Raman  
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun BQ;  Jiang DS;  Pan Z;  Li LH;  Wu RH;  Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(112Kb)  |  收藏  |  浏览/下载：1160/261  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iiiv Materials  Luminescence  Gaasn