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Study of infrared luminescence from Er-implanted GaN films 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Chen WD;  Song SF;  Zhu JJ;  Wang XL;  Chen CY;  Hsu CC;  Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: wdchen@red.semi.ac.cn
Adobe PDF(219Kb)  |  收藏  |  浏览/下载：1324/325  |  提交时间：2010/11/15
Doping  Metalorganic Chemical Vapor Deposition  Molecular Beam Epitaxy  Gallium Compounds  Semiconducting Gallium Compounds  Erbium  
Mechanism on exciton-mediated energy transfer in erbium-doped silicon 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Lei HB;  Yang QQ;  Ou HY;  Wang QM;  Lei HB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(229Kb)  |  收藏  |  浏览/下载：1275/251  |  提交时间：2010/11/15
Er-doped Silicon  Photoluminescence  Energy Transfer  Al2o3 Wave-guides  Er  Electroluminescence  Epitaxy  Gaas  
High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Chen LH;  Xu ZT;  Ma XY;  Zhang JM;  Yang GW;  Xu JY;  Chen LH Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(271Kb)  |  收藏  |  浏览/下载：1221/283  |  提交时间：2010/11/15
High Power  Al-free Laser  Communication  Epitaxy  
Preparation and characterization of erbium doped sol-gel silica glasses 会议论文
RARE-EARTH-DOPED MATERIALS AND DEVICES III, 3622, SAN JOSE, CA, JAN 27-28, 1999
作者:  Lei HB;  Yang QQ;  Ou HY;  Chen BW;  Yu JZ;  Wang QM;  Xie DT;  Wu JG;  Xu DF;  Xu GX;  Lei HB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(461Kb)  |  收藏  |  浏览/下载：1639/368  |  提交时间：2010/10/29
Er-doped Silica Glass  Sol-gel Process  Photoluminescence  Planar Wave-guides  Molecular-beam Epitaxy  Crystal Silicon  Implanted Si  Luminescence  Electroluminescence  Fabrication  Impurities  Films  Ions  
The influence of oxygen content on photoluminescence from Er-doped SiOx 会议论文
LUMINESCENT MATERIALS, 560, SAN FRANCISCO, CA, APR 05-08, 1999
作者:  Chen WD;  Liang JJ;  Hsu CC;  Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：837/0  |  提交时间：2010/10/29
Photoluminescence measurements on erbium-doped silicon 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Lei HB;  Yang QQ;  Ou HY;  Wang QM;  Lei HB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(310Kb)  |  收藏  |  浏览/下载：1264/233  |  提交时间：2010/10/29
Erbium-doped Silicon  Photoluminescence  Energy Transfer