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SiGe/Si quantum well resonant-cavity-enhanced photodetector 会议论文
TERAHERTZ AND GIGAHERTZ ELECTRONICS AND PHOTONICS II, 4111, SAN DIEGO, CA, JUL 31-AUG 02, 2000
作者:  Li C;  Yang QQ;  Wang HJ;  Zhu JL;  Luo LP;  Yu JZ;  Wang QM;  Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(615Kb)  |  收藏  |  浏览/下载：1888/274  |  提交时间：2010/10/29
Rce Photodetector  Sige/si  Simox  Bragg Reflector  
Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors 会议论文
50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS, LAS VEGAS, NV, MAY 21-24, 2000
作者:  Li C;  Yang QQ;  Ou HY;  Wang QM;  Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1571/439  |  提交时间：2010/10/29
Mirrors  
Si-based resonant-cavity-enhanced photodetector 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Wang QM;  Li C;  Cheng BW;  Yang QQ;  Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(106Kb)  |  收藏  |  浏览/下载：1635/208  |  提交时间：2010/11/15
Rce Photodetector  Sige/si  Simox  Bragg Reflector  Top-illumination  Bottom-illumination  Responsivity Spectra  
Mechanism on exciton-mediated energy transfer in erbium-doped silicon 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Lei HB;  Yang QQ;  Ou HY;  Wang QM;  Lei HB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(229Kb)  |  收藏  |  浏览/下载：1349/251  |  提交时间：2010/11/15
Er-doped Silicon  Photoluminescence  Energy Transfer  Al2o3 Wave-guides  Er  Electroluminescence  Epitaxy  Gaas  
The fabrication of thick SiO2 layer by anodization 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Ou HY;  Yang QQ;  Lei HB;  Wang QM;  Hu XW;  Ou HY Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(185Kb)  |  收藏  |  浏览/下载：1423/369  |  提交时间：2010/11/15
Thick Sio2 Layer  Porous Silicon  Sio2/si Waveguide Device  Wave-guides  Silicon  
Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Li C;  Yang QQ;  Wang HJ;  Cheng BW;  Yu JZ;  Wang QM;  Li C Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China.
Adobe PDF(403Kb)  |  收藏  |  浏览/下载：1255/232  |  提交时间：2010/11/15
Circular Waveguide Photodetector  Responsivity  Quantum Efficiency  Sige/si Mqw  1.3 Mu-m