SiGe/Si quantum well resonant-cavity-enhanced photodetector

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	SiGe/Si quantum well resonant-cavity-enhanced photodetector
	Li C; Yang QQ; Wang HJ; Zhu JL; Luo LP; Yu JZ; Wang QM; Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
	2000
会议名称	Conference on Terahertz and Gigahertz Electronics and Photonics II
会议录名称	TERAHERTZ AND GIGAHERTZ ELECTRONICS AND PHOTONICS II, 4111
页码	54-59
会议日期	JUL 31-AUG 02, 2000
会议地点	SAN DIEGO, CA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3756-5
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Resonant-cavity-enhanced photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report a novel SiGe/Si multiple quantum-well resonant-cavity-enhanced photodetector fabricated on a separation-by-implanted-oxygen wafer operating near 1300nm. The buried oxide layer in SIMOX is used as a bottom mirror to form a vertical cavity with silicon dioxide/silicon Bragg reflector deposited on the top surface. The quantum efficiency at the wavelength of 1300nm is measured with 3.5% at a reverse bias of 15V, which is enhanced by 10 folds compared with a conventional photodetector with the same absorption structures.
关键词	Rce Photodetector Sige/si Simox Bragg Reflector
学科领域	光电子学
主办者	SPIE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13731
专题	中国科学院半导体研究所（2009年前）
通讯作者	Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Li C,Yang QQ,Wang HJ,et al. SiGe/Si quantum well resonant-cavity-enhanced photodetector[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2000:54-59.

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