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题名: Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
作者: Sun, GS (Sun, G. S.);  Liu, XF (Liu, X. F.);  Gong, QC (Gong, Q. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Li, JY (Li, J. Y.);  Zeng, YP (Zeng, Y. P.);  Li, JM (Li, J. M.)
出版日期: 2006
会议日期: SEP 13-19, 2005
摘要: The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.
会议名称: 11th Conference on Defects Recognition Imaging and Physics in Semiconductors
会议文集: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Sun, GS (Sun, G. S.); Liu, XF (Liu, X. F.); Gong, QC (Gong, Q. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Li, JY (Li, J. Y.); Zeng, YP (Zeng, Y. P.); Li, JM (Li, J. M.) .Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces .见:ELSEVIER SCI LTD .MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND ,FEB-JUN 2006,9 (1-3): 275-278
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