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题名: Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation
作者: Islam MR;  Chen NF;  Yamada M
出版日期: 2006
会议日期: SEP 13-19, 2005
摘要: Raman scattering measurements have been carried out on ferromagnetic semiconductor Ga1-xMnxN prepared by Mn-ion implantation and post annealing. The Raman results obtained from the annealed and un-annealed Ga1-xMnxN demonstrate that crystalline quality has been improved in Ga1-xMnxN after annealing. Some new vibrational modes in addition to GaN-like modes are found in the Raman spectra measured from the Ga1-xMnxN where the GaN-like modes are found to be shifted in the higher frequency side than those measured from the bulk GaN. A new vibrational mode observed is assigned to MnN-like mode. Other new phonon modes observed are assigned to disorder-activated modes and Mn-related vibrational modes caused by Mn-ion implantation and post-annealing. (c) 2006 Elsevier Ltd. All rights reserved.
会议名称: 11th Conference on Defects Recognition Imaging and Physics in Semiconductors
KOS主题词: Raman effect
会议文集: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Islam, MR (Islam, M. R.); Chen, NF (Chen, N. F.); Yamada, M (Yamada, M.) .Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation .见:ELSEVIER SCI LTD .MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND ,FEB-JUN 2006,9 (1-3): 184-187
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