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题名: Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth
作者: Zhao C;  Chen YH;  Zhao M;  Zhang CL;  Xu B;  Yu LK;  Sun J;  Lei W;  Wang ZG
出版日期: 2006
会议日期: SEP 13-19, 2005
摘要: Performing an event-based continuous kinetic Monte Carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (QDs). The relative positions between the QDs and the dislocations are studied. The stress effects to the growth of the QDs are considered in simulation. The simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs. (c) 2006 Elsevier Ltd. All rights reserved.
会议名称: 11th Conference on Defects Recognition Imaging and Physics in Semiconductors
KOS主题词: Monte Carlo method
会议文集: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zhao, C (Zhao, C.); Chen, YH (Chen, Y. H.); Zhao, M (Zhao, Man); Zhang, CL (Zhang, C. L.); Xu, B (Xu, B.); Yu, LK (Yu, L. K.); Sun, J (Sun, J.); Lei, W (Lei, W.); Wang, ZG (Wang, Z. G.) .Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth .见:ELSEVIER SCI LTD .MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND ,FEB-JUN 2006,9 (1-3): 31-35
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