Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth
	Zhao C; Chen YH; Zhao M; Zhang CL; Xu B; Yu LK; Sun J; Lei W; Wang ZG; Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: czhao@semi.ac.cn
	2006
会议名称	11th Conference on Defects Recognition Imaging and Physics in Semiconductors
会议录名称	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
页码	9 (1-3): 31-35
会议日期	SEP 13-19, 2005
会议地点	Beijing, PEOPLES R CHINA
出版地	THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND
出版者	ELSEVIER SCI LTD
ISSN	1369-8001
部门归属	chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; beijing inst petrochem & technol, dept math & phys, beijing 102617, peoples r china
摘要	Performing an event-based continuous kinetic Monte Carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (QDs). The relative positions between the QDs and the dislocations are studied. The stress effects to the growth of the QDs are considered in simulation. The simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs. (c) 2006 Elsevier Ltd. All rights reserved.
关键词	Monte Carlo Simulation
学科领域	半导体材料
收录类别	CPCI（ISTP）
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9992
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: czhao@semi.ac.cn
推荐引用方式 GB/T 7714	Zhao C,Chen YH,Zhao M,et al. Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth[C]. THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND:ELSEVIER SCI LTD,2006:9 (1-3): 31-35.

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