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题名: Silicon thin films prepared in the transition region and their use in solar cells
作者: Zhang S;  Liao X;  Raniero L;  Fortunato E;  Xu Y;  Kong G;  Aguas H;  Ferreira I;  Martins R
出版日期: 2006
会议日期: JAN 27-FEB 01, 2004
摘要: Diphasic silicon films (nc-Si/a-Si:H) have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the nc-Si/a-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. The blue shift for the stretching mode and red shift for the wagging mode in the IR spectra also show the variation of the microstructure. By using this kind of film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51 % and a stabilized efficiency of 8.01% (AM 1.5, 100 mw/cm(2)) at room temperature. (c) 2006 Published by Elsevier B.V.
会议名称: 14th International Photovoltaic Science and Engineering Conference
KOS主题词: Silicon
会议文集: SOLAR ENERGY MATERIALS AND SOLAR CELLS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zhang, S (Zhang, S.); Liao, X (Liao, X.); Raniero, L (Raniero, L.); Fortunato, E (Fortunato, E.); Xu, Y (Xu, Y.); Kong, G (Kong, G.); Aguas, H (Aguas, H.); Ferreira, I (Ferreira, I.); Martins, R (Martins, R.) .Silicon thin films prepared in the transition region and their use in solar cells .见:ELSEVIER SCIENCE BV .SOLAR ENERGY MATERIALS AND SOLAR CELLS,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,NOV 23 2006,90 (18-19): 3001-3008
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