Silicon thin films prepared in the transition region and their use in solar cells
Zhang S; Liao X; Raniero L; Fortunato E; Xu Y; Kong G; Aguas H; Ferreira I; Martins R; Zhang, S, New Univ Lisbon, Fac Sci & Technol, CENIMAT, Dept Mat Sci, P-2829516 Caparica, Portugal. 电子邮箱地址: sz@uninova.pt
2006
会议名称14th International Photovoltaic Science and Engineering Conference
会议录名称SOLAR ENERGY MATERIALS AND SOLAR CELLS
页码90 (18-19): 3001-3008
会议日期JAN 27-FEB 01, 2004
会议地点Bangkok, THAILAND
出版地PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者ELSEVIER SCIENCE BV
ISSN0927-0248
部门归属new univ lisbon, fac sci & technol, cenimat, dept mat sci, p-2829516 caparica, portugal; uninova, cemop, p-2829516 caparica, portugal; chinese acad sci, inst semicond, state key surface phys, beijing 100083, peoples r china; chinese acad sci, ctr condensed matter phys, beijing 100083, peoples r china
摘要Diphasic silicon films (nc-Si/a-Si:H) have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the nc-Si/a-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. The blue shift for the stretching mode and red shift for the wagging mode in the IR spectra also show the variation of the microstructure. By using this kind of film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51 % and a stabilized efficiency of 8.01% (AM 1.5, 100 mw/cm(2)) at room temperature. (c) 2006 Published by Elsevier B.V.
关键词Silicon
学科领域半导体材料
收录类别其他
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9982
专题中国科学院半导体研究所(2009年前)
通讯作者Zhang, S, New Univ Lisbon, Fac Sci & Technol, CENIMAT, Dept Mat Sci, P-2829516 Caparica, Portugal. 电子邮箱地址: sz@uninova.pt
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Zhang S,Liao X,Raniero L,et al. Silicon thin films prepared in the transition region and their use in solar cells[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:90 (18-19): 3001-3008.
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