Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers - art. no. 63210I

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers - art. no. 63210I
	Feng W; Pan JQ; Zhou F; Wang LF; Bian J; Wang BJ; An X; Zhao LJ; Zhu HL; Wang W; Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
	2006
会议名称	Conference on Nanophotonic Materials III
会议录名称	Nanophotonic Materials III丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
页码	6321: I3210-I3210
会议日期	AUG 13-14, 2006
会议地点	San Diego, CA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-6400-7
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	The narrow stripe selective growth of the InGaAlAs bulk waveguides and InGaAlAs MQW waveguides was first investigated. Flat and clear interfaces were obtained for the selectively grown InGaAlAs waveguides under optimized growth conditions. These selectively grown InGaAlAs waveguides were covered by specific InP layers, which can keep the waveguides from being oxidized during the fabrication of devices. PL peak wavelength shifts of 70 nm for the InGaAlAs bulk waveguides and 73 nm for the InGaAlAs MQW waveguides were obtained with a small mask stripe width varying from 0 to 40 gm, and were interpreted in considering both the migration effect from the masked region (MMR) and the lateral vapor diffusion effect (LVD). The quality of the selectively grown InGaAlAs MQW waveguides was confirmed by the PL peak intensity and the PL FWHM. Using the narrow stripe selectively grown InGaAlAs MQW waveguides, then the buried heterostructure (BH) lasers were fabricated by a developed unselective regrowth method, instead of conventional selective regrowth. The InGaAlAs MQW BH lasers exhibit good performance characteristics, with a high internal differential quantum efficiency of about 85% and an internal loss of 6.7 cm(-1).
关键词	Inp
学科领域	光电子学
主办者	SPIE.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9966
专题	中国科学院半导体研究所（2009年前）
通讯作者	Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Feng W,Pan JQ,Zhou F,et al. Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers - art. no. 63210I[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2006:6321: I3210-I3210.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
2365.pdf（520KB）			限制开放	--	请求全文