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题名: Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)
作者: Wang YL;  Wu J;  Chen YH;  Wang ZG;  Zeng YP
出版日期: 2004
会议日期: SEP 20-25, 2004
摘要: The self-organized InAs/In0.52Al0.48As nanostructure were grown on InP (001) using molecular beam epitaxy (MBE). The nanostructure has been studied using transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The edge dislocations with the Burgers vector b = ([001]/2) and extending along the [$(110) over bar $] direction are observed. The results show that in the region near an edge dislocation, no InAs wires were formed, while in the regions free of dislocation, wire-like nanostructures were formed. The mechanisms for the formation of the [001]/2 edge dislocations were discussed.
会议名称: 13th International Conference on Semiconducting and Insulating Materials (SIMC XIII)
会议文集: SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Wang, YL; Wu, J; Chen, YH; Wang, ZG; Zeng, YP .Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001) .见:IEEE .SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials,345 E 47TH ST, NEW YORK, NY 10017 USA ,2004,238-241
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