Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications
Sun, J; Hu, LZ; Sun, YC; Wang, ZY; Sun, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China.
2004
会议名称13th International Conference on Semiconducting and Insulating Materials (SIMC XIII)
会议录名称SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials
页码172-175
会议日期SEP 20-25, 2004
会议地点Beijing, PEOPLES R CHINA
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN0-7803-8668-X
部门归属dalian univ technol, state key lab mat modificat laser ion elect beams, dalian 116023, liaoning prov, peoples r china
摘要A novel technique of manufacturing Al0.3Ga0.7As pyramids by liquid phase epitaxy (LPE) for scanning probe microscopy (SPM) sensors is reported Four meticulously designed conditions-partial oxidation, deficient solute, air quenching and germanium doping result in defect-free homogeneous nucleation and subsequent pyramid formation. Micrometer-sized frustums and pyramids are detected by scanning electron microscopy (SEM). The sharp end of the microtip has a radius of curvature smaller than 50 nm. It is believed that such accomplishments would contribute not only to crystal growth theory, but also to miniature fabrication technology.
关键词Growth
学科领域半导体材料
主办者IEEE Electron Devices Soc.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; Hakuto Co Ltd.; Shenzhen Oceans King Investment Imp & Exp Co.; Shenzhen Refond Opt ELE Co Ltd.; Jiangsu Nata Optoelect Mat Co Ltd.; Beijing Univ Technol.; Gen Res Inst Nnferrous Mat.; Nanjing Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Zhejiang Univ.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9922
专题中国科学院半导体研究所(2009年前)
通讯作者Sun, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China.
推荐引用方式
GB/T 7714
Sun, J,Hu, LZ,Sun, YC,et al. Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:172-175.
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