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题名: Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice
作者: Cui CX;  Chen YH;  Zhang CL;  Jin P;  Xu B;  Shi GX;  Zhao C;  Wang ZG
出版日期: 2004
会议日期: SEP 20-25, 2004
摘要: A promising approach for positioning of InAs islands on (110)GaAs is demonstrated. By combining self-assembly of quantum dots with solid source molecular beam epitaxy (MBE) on cleaved edge of InGaAs/GaAs superlattice (SL), linear alignment of InAs islands on the InGaAs strain layers have been fabricated The cleaved edge of InGaAs/GaAs SL acts as strain nanopattern for InAs selective growth. Indium atoms incident on the surface will preferentially migrate to InGaAs regions where favorable bonding sites are available. The strain nanopattern's effect is studied by the different indium fraction and thickness of InxGa1-xAs/GaAs SL. The ordering of the InAs islands is found to depend on the properties of the underlying InGaAs strain layers.
会议名称: 13th International Conference on Semiconducting and Insulating Materials (SIMC XIII)
KOS主题词: Quantum dots
会议文集: SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Cui, CX; Chen, YH; Zhang, CL; Jin, P; Xu, B; Shi, GX; Zhao, C; Wang, ZG .Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice .见:IEEE .SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials,345 E 47TH ST, NEW YORK, NY 10017 USA ,2004,131-134
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