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题名: Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices
作者: Xu B;  Wang ZG;  Chen YH;  Jin P;  Ye XL;  Liu HY;  Zhang ZY;  Shi GX;  Zhang CL;  Wang YL;  Liu FQ
出版日期: 2004
会议日期: SEP 20-25, 2004
摘要: Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.
会议名称: 13th International Conference on Semiconducting and Insulating Materials (SIMC XIII)
会议文集: SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Xu, B; Wang, ZG; Chen, YH; Jin, P; Ye, XL; Liu, HY; Zhang, ZY; Shi, GX; Zhang, CL; Wang, YL; Liu, FQ .Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices .见:IEEE .SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials,345 E 47TH ST, NEW YORK, NY 10017 USA ,2004,113-118
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