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题名: Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
作者: Zhao, YW;  Dong, ZY;  Zhang, YH;  Li, CJ
出版日期: 2004
会议日期: SEP 20-25, 2004
摘要: Fe-doped semi-insulating (SI) InP has become semi-conducting (SC) material completely after annealing at 900 V for 10 hours. Defects in the SC and SI InP materials have been studied by deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) respectively. The DLTS only detected Fe acceptor related deep level defect with significant concentration, suggesting the formation of a high concentration of shallow donor in the SC-InP TSC results confirmed the nonexistence of deep level defects in the annealed SI-InP. The results demonstrate a significant influence of the thermally induced defects on the electrical properties of SI-InP. The formation mechanism and the nature of the shallow donor defect have been discussed based on the results.
会议名称: 13th International Conference on Semiconducting and Insulating Materials (SIMC XIII)
KOS主题词: Electron paramagnetic resonance spectroscopy;  alpha-particle spectra;  Optical spectrometers;  Spectrum analysis;  Resonance
会议文集: SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zhao, YW; Dong, ZY; Zhang, YH; Li, CJ .Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration .见:IEEE .SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials,345 E 47TH ST, NEW YORK, NY 10017 USA ,2004,15-18
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