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题名: Recent progresses of SOI-based photonic devices - art. no. 60201R
作者: Yu JZ;  Chen SW;  Li ZY;  Chen YY;  Sun F;  Li YT;  Li YP;  Liu JW;  Yang D;  Xia JS;  Li CB;  Wang QM
出版日期: 2005
会议日期: NOV 07-10, 2005
摘要: SOI (Silicon on Insulator) based photonic devices, including stimulated emission from Si diode, RCE (Resonant Cavity Enhanced) photodiode with quantum structure, MOS (Metal Oxide Semiconductor) optical modulator with high frequency, SOI optical matrix switch and wavelength tunable filter are reviewed in the paper. The emphasis will be played on our recent results of SOI-based thermo-optic waveguide matrix switch with low insertion loss and fast response. A folding re-arrangeable non-blocking 4x4 matrix switch with total internal reflection (TIR) mirrors and a first blocking 16 x 16 matrix were fabricated on SOI wafer. The extinction ratio and the crosstalk are better. The insertion loss and the polarization dependent loss (PDL) at 1.55 mu m increase slightly with longer device length and more bend and intersecting waveguides. The insertion losses are expected to decrease 2-3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.
会议名称: Conference on Optoelectronic Materials and Devices for Optical Communications
KOS主题词: semiconductor-insulator boundaries
会议文集: Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Yu, JZ; Chen, SW; Li, ZY; Chen, YY; Sun, F; Li, YT; Li, YP; Liu, JW; Yang, D; Xia, JS; Li, CB; Wang, QM .Recent progresses of SOI-based photonic devices - art. no. 60201R .见:SPIE-INT SOC OPTICAL ENGINEERING .Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) ,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2005,6020: R201-R201
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