| 题名: | The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S |
| 作者: | Li J; An JM; Wang HJ; Xia JL; Gao DS; Hu XW |
| 出版日期: | 2006 |
| 会议日期: | AUG 21-26, 2005 |
| 摘要: | Oxidizing thick porous silicon layer into silicon dioxide is a timesaving and low-cost process for producing thick silicon dioxide layer used in silicon-based optical waveguide devices. The solution of H2O2 is proposed to post-treat thick porous silicon (PS) films. The prepared PS layer as the cathode is applied about 10 mA/cm(2) current in mixture of ethanol, HF, and H2O2 solutions, in order to improve the stability and the smoothness of the surface. With the low-temperature dry-O-2 pre-oxidizations and high-temperature wet O-2 oxidizations process, a high-quality SiO2 30 mu m thickness layer that fit for the optical waveguide device was prepared. The SEM images show significant improved smoothness on the surface of oxidized PS thick films, the SiO2 film has a stable and uniformity reflex index that measured by the prism coupler, the uniformity of the reflex index in different place of the wafer is about 0.0003. |
| 会议名称: | 20th Congress of the International-Commission-for-Optics |
| KOS主题词: | Porous silicon |
| 会议文集: | ICO20 Materials and Nanostructures丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) |
| 专题: | 中国科学院半导体研究所（2009年前）_会议论文
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| 2324.pdf | | 423Kb | Adobe PDF | 浏览/下载
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许可声明：条目相关作品遵循知识共享协议(Creative Commons)。
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Li, J; An, JM; Wang, HJ; Xia, JL; Gao, DS; Hu, XW .The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S .见：SPIE-INT SOC OPTICAL ENGINEERING .ICO20 Materials and Nanostructures丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) ,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2006,6029: S290-S290
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