SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S
Li J; An JM; Wang HJ; Xia JL; Gao DS; Hu XW; Li, J, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
2006
Conference Name20th Congress of the International-Commission-for-Optics
Source PublicationICO20 Materials and Nanostructures丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
Pages6029: S290-S290
Conference DateAUG 21-26, 2005
Conference PlaceChangchun, PEOPLES R CHINA
Publication Place1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
PublisherSPIE-INT SOC OPTICAL ENGINEERING
ISSN0277-786X
ISBN0-8194-6060-5
metadata_83chinese acad sci, inst semicond, beijing 100083, peoples r china
AbstractOxidizing thick porous silicon layer into silicon dioxide is a timesaving and low-cost process for producing thick silicon dioxide layer used in silicon-based optical waveguide devices. The solution of H2O2 is proposed to post-treat thick porous silicon (PS) films. The prepared PS layer as the cathode is applied about 10 mA/cm(2) current in mixture of ethanol, HF, and H2O2 solutions, in order to improve the stability and the smoothness of the surface. With the low-temperature dry-O-2 pre-oxidizations and high-temperature wet O-2 oxidizations process, a high-quality SiO2 30 mu m thickness layer that fit for the optical waveguide device was prepared. The SEM images show significant improved smoothness on the surface of oxidized PS thick films, the SiO2 film has a stable and uniformity reflex index that measured by the prism coupler, the uniformity of the reflex index in different place of the wafer is about 0.0003.
KeywordPorous Silicon
Subject Area半导体材料
Funding OrganizationInt Commiss Opt.; Chinese Opt Soc.; Changchun Inst Opt, Fine Mech & Phys, CAS.; AFOSR Asia Off.; Chinese Acad Engn.; Chinese Acad Sci & Technol.; European Opt Soc.; IEEE LEOS.; Natl Nat Sci Fdn China.; Opt Soc Japan.; Opt Soc Korea.; Opt Soc Russia, Siberian.; Opt Soc Amer.; SPIE.
Indexed By其他
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9884
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLi, J, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Li J,An JM,Wang HJ,et al. The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2006:6029: S290-S290.
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