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The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S | |
Li J; An JM; Wang HJ; Xia JL; Gao DS; Hu XW; Li, J, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. | |
2006 | |
会议名称 | 20th Congress of the International-Commission-for-Optics |
会议录名称 | ICO20 Materials and Nanostructures丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) |
页码 | 6029: S290-S290 |
会议日期 | AUG 21-26, 2005 |
会议地点 | Changchun, PEOPLES R CHINA |
出版地 | 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
出版者 | SPIE-INT SOC OPTICAL ENGINEERING |
ISSN | 0277-786X |
ISBN | 0-8194-6060-5 |
部门归属 | chinese acad sci, inst semicond, beijing 100083, peoples r china |
摘要 | Oxidizing thick porous silicon layer into silicon dioxide is a timesaving and low-cost process for producing thick silicon dioxide layer used in silicon-based optical waveguide devices. The solution of H2O2 is proposed to post-treat thick porous silicon (PS) films. The prepared PS layer as the cathode is applied about 10 mA/cm(2) current in mixture of ethanol, HF, and H2O2 solutions, in order to improve the stability and the smoothness of the surface. With the low-temperature dry-O-2 pre-oxidizations and high-temperature wet O-2 oxidizations process, a high-quality SiO2 30 mu m thickness layer that fit for the optical waveguide device was prepared. The SEM images show significant improved smoothness on the surface of oxidized PS thick films, the SiO2 film has a stable and uniformity reflex index that measured by the prism coupler, the uniformity of the reflex index in different place of the wafer is about 0.0003. |
关键词 | Porous Silicon |
学科领域 | 半导体材料 |
主办者 | Int Commiss Opt.; Chinese Opt Soc.; Changchun Inst Opt, Fine Mech & Phys, CAS.; AFOSR Asia Off.; Chinese Acad Engn.; Chinese Acad Sci & Technol.; European Opt Soc.; IEEE LEOS.; Natl Nat Sci Fdn China.; Opt Soc Japan.; Opt Soc Korea.; Opt Soc Russia, Siberian.; Opt Soc Amer.; SPIE. |
收录类别 | 其他 |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/9884 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Li, J, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. |
推荐引用方式 GB/T 7714 | Li J,An JM,Wang HJ,et al. The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2006:6029: S290-S290. |
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