Knowledge Management System Of Institute of Semiconductors,CAS
| The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S | |
| Li J; An JM; Wang HJ; Xia JL; Gao DS; Hu XW; Li, J, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. | |
| 2006 | |
| Conference Name | 20th Congress of the International-Commission-for-Optics |
| Source Publication | ICO20 Materials and Nanostructures丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) |
| Pages | 6029: S290-S290 |
| Conference Date | AUG 21-26, 2005 |
| Conference Place | Changchun, PEOPLES R CHINA |
| Publication Place | 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Publisher | SPIE-INT SOC OPTICAL ENGINEERING |
| ISSN | 0277-786X |
| ISBN | 0-8194-6060-5 |
| metadata_83 | chinese acad sci, inst semicond, beijing 100083, peoples r china |
| Abstract | Oxidizing thick porous silicon layer into silicon dioxide is a timesaving and low-cost process for producing thick silicon dioxide layer used in silicon-based optical waveguide devices. The solution of H2O2 is proposed to post-treat thick porous silicon (PS) films. The prepared PS layer as the cathode is applied about 10 mA/cm(2) current in mixture of ethanol, HF, and H2O2 solutions, in order to improve the stability and the smoothness of the surface. With the low-temperature dry-O-2 pre-oxidizations and high-temperature wet O-2 oxidizations process, a high-quality SiO2 30 mu m thickness layer that fit for the optical waveguide device was prepared. The SEM images show significant improved smoothness on the surface of oxidized PS thick films, the SiO2 film has a stable and uniformity reflex index that measured by the prism coupler, the uniformity of the reflex index in different place of the wafer is about 0.0003. |
| Keyword | Porous Silicon |
| Subject Area | 半导体材料 |
| Funding Organization | Int Commiss Opt.; Chinese Opt Soc.; Changchun Inst Opt, Fine Mech & Phys, CAS.; AFOSR Asia Off.; Chinese Acad Engn.; Chinese Acad Sci & Technol.; European Opt Soc.; IEEE LEOS.; Natl Nat Sci Fdn China.; Opt Soc Japan.; Opt Soc Korea.; Opt Soc Russia, Siberian.; Opt Soc Amer.; SPIE. |
| Indexed By | 其他 |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/9884 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Corresponding Author | Li, J, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Li J,An JM,Wang HJ,et al. The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2006:6029: S290-S290. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2324.pdf（423KB） | 限制开放 | -- | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment