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题名: Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures
作者: Wang, CM;  Wang, XL;  Hu, GX;  Wang, JX;  Li, JP
出版日期: 2006
会议日期: SEP 18-22, 2005
摘要: Improved electrical properties of AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures grown by metalorganic chemical vapor deposition (MOCVD) were achieved through increasing the Al mole fraction in the AlGaN barrier layers. An average sheet resistance of 326.6 Omega/sq and a good resistance uniformity of 98% were obtained for a 2-inch Al0.38Ga0 62N/GaN HEMT structure. The surface morphology of AlxGa1-xN/GaN HEMT structures strongly correlates with the Al content. More defects were formed with increasing Al content due to the increase of tensile strain, which limits further reduction of the sheet resistance. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.
会议名称: 32nd International Symposium on Compound Semiconductors
KOS主题词: Heterostructures;  Aluminum oxide
会议文集: Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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Wang, CM; Wang, XL; Hu, GX; Wang, JX; Li, JP .Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures .见:WILEY-VCH, INC .Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS ,605 THIRD AVE, NEW YORK, NY 10158-0012 USA ,2006,Vol 3 no 3 3 (3): 486-489
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