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题名: Micro-raman investigation of defects in a 4H-SiC homoepilayer
作者: Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Zhao, YM (Zhao, Y. M.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Zeng, YP (Zeng, Y. P.)
出版日期: 2007
会议日期: SEP, 2006
摘要: Three types of defects, namely defect I, defect 11, defect 111, in the 4H-SiC homoepilayer were investigated by micro-raman scattering measurement. These defects all originate from a certain core and are composed of (1) a wavy tail region, (11) two long tails, the so called comet and (111) three plaits. It was found that there are 3C-SiC inclusions in the cores of defect 11 and defect III and the shape of inclusion determines the type of defect II or defect III. If the core contains a triangle-shaped inclusion, the defect III would be formed; otherwise, the defect 11 was formed. No inclusion was observed in the core of the defect I. The mechanisms of these defects are discussed.
会议名称: 6th European Conference on Silicon Carbide and Related Materials
KOS主题词: Defects;  Thin films;  Silicon carbide
会议文集: Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Zhao, YM (Zhao, Y. M.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Zeng, YP (Zeng, Y. P.) .Micro-raman investigation of defects in a 4H-SiC homoepilayer .见:TRANS TECH PUBLICATIONS LTD .Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM ,LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND ,2007,556-557: 387-390
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