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题名: Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications
作者: Sun, G (Sun, Guosheng);  Ning, J (Ning, Jin);  Liu, X (Liu, Xingfang);  Zhao, Y (Zhao, Yongmei);  Li, J (Li, Jiaye);  Wang, L (Wang, Lei);  Zhao, W (Zhao, Wanshun);  Wang, L (Wang, Liang)
出版日期: 2007
会议日期: SEP, 2006
摘要: 3C-SiC is a promising material for the development of microelectromechanical systems (MEMS) applications in harsh environments. This paper presents the LPCVD growth of heavily nitrogen doped polycrystalline 3C-SiC films on Si wafers with 2.0 mu m-thick silicon dioxide (SiO2) films for resonator applications. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H-2 in a newly developed vertical CVD chamber. NH3 was used as n-type dopant. 3C-SiC films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and room temperature Hall Effect measurements. It was shown that there is no voids at the interface between 3C-SiC and SiO2. Undoped 3C-SiC films show n-type conduction with resisitivity, Hall mobility, and carrier concentration at room temperature of about 0.56 Omega center dot cm, 54 cm(2)/Vs, and 2.0x 10(17) cm(-3), respectively. The heavily nitrogen doped polycrystalline 3C-SiC with the resisitivity of less than 10(-3) Omega center dot cm was obtained by in-situ doping. Polycrystalline SiC resonators have been fabricated preliminarily on these heavily doped SiC films with thickness of about 2 mu m. Resonant frequency of 49.1 KHz was obtained under atmospheric pressure.
会议名称: 6th European Conference on Silicon Carbide and Related Materials
KOS主题词: resonator;  doping;  Silicon carbide
会议文集: Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Sun, G (Sun, Guosheng); Ning, J (Ning, Jin); Liu, X (Liu, Xingfang); Zhao, Y (Zhao, Yongmei); Li, J (Li, Jiaye); Wang, L (Wang, Lei); Zhao, W (Zhao, Wanshun); Wang, L (Wang, Liang) .Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications .见:TRANS TECH PUBLICATIONS LTD .Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM ,LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND ,2007,556-557: 179-182
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