Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates

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	Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates
	Liang S; Zhu HL; Zhou JT; Cheng YB; Pan JQ; Zhao LJ; Wang W; Liang, S, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
	2006
Conference Name	International Symposium on Biophotonics, Nanophotonics and Metamaterials
Source Publication	Proceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials
Pages	302-305
Conference Date	OCT 16-18, 2006
Conference Place	Hangzhou, PEOPLES R CHINA
Publication Place	345 E 47TH ST, NEW YORK, NY 10017 USA
Publisher	IEEE
ISBN	978-0-7803-9773-6
metadata_83	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
Abstract	Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates grown by metalorganic chemical vapor deposition (MOCVD) is studied. An abnormal trend of the evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then there is a sudden decrease at 535 degrees C. Photoluminescence (PL) studies show that QDs on vicinal substrates have a narrower PL line width, a longer emission wavelength and a larger PL intensity.
Keyword	Chemical-vapor-deposition
Subject Area	光电子学
Funding Organization	Zhejiang Univ.; Royal Inst Technol.; Chinese Univ Hong Kong.; SUNY Buffalo.; IEEE LEOS.
Indexed By	其他
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/9850
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Liang, S, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Recommended Citation GB/T 7714	Liang S,Zhu HL,Zhou JT,et al. Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:302-305.

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