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Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates | |
Liang S![]() ![]() | |
2006 | |
Conference Name | International Symposium on Biophotonics, Nanophotonics and Metamaterials |
Source Publication | Proceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials |
Pages | 302-305 |
Conference Date | OCT 16-18, 2006 |
Conference Place | Hangzhou, PEOPLES R CHINA |
Publication Place | 345 E 47TH ST, NEW YORK, NY 10017 USA |
Publisher | IEEE |
ISBN | 978-0-7803-9773-6 |
metadata_83 | chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
Abstract | Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates grown by metalorganic chemical vapor deposition (MOCVD) is studied. An abnormal trend of the evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then there is a sudden decrease at 535 degrees C. Photoluminescence (PL) studies show that QDs on vicinal substrates have a narrower PL line width, a longer emission wavelength and a larger PL intensity. |
Keyword | Chemical-vapor-deposition |
Subject Area | 光电子学 |
Funding Organization | Zhejiang Univ.; Royal Inst Technol.; Chinese Univ Hong Kong.; SUNY Buffalo.; IEEE LEOS. |
Indexed By | 其他 |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/9850 |
Collection | 中国科学院半导体研究所(2009年前) |
Corresponding Author | Liang, S, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. |
Recommended Citation GB/T 7714 | Liang S,Zhu HL,Zhou JT,et al. Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:302-305. |
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