SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates
Liang S; Zhu HL; Zhou JT; Cheng YB; Pan JQ; Zhao LJ; Wang W; Liang, S, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
2006
Conference NameInternational Symposium on Biophotonics, Nanophotonics and Metamaterials
Source PublicationProceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials
Pages302-305
Conference DateOCT 16-18, 2006
Conference PlaceHangzhou, PEOPLES R CHINA
Publication Place345 E 47TH ST, NEW YORK, NY 10017 USA
PublisherIEEE
ISBN978-0-7803-9773-6
metadata_83chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
AbstractTemperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates grown by metalorganic chemical vapor deposition (MOCVD) is studied. An abnormal trend of the evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then there is a sudden decrease at 535 degrees C. Photoluminescence (PL) studies show that QDs on vicinal substrates have a narrower PL line width, a longer emission wavelength and a larger PL intensity.
KeywordChemical-vapor-deposition
Subject Area光电子学
Funding OrganizationZhejiang Univ.; Royal Inst Technol.; Chinese Univ Hong Kong.; SUNY Buffalo.; IEEE LEOS.
Indexed By其他
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9850
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLiang, S, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Liang S,Zhu HL,Zhou JT,et al. Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:302-305.
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