Knowledge Management System Of Institute of Semiconductors,CAS
| Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE | |
| Feng W; Pan WWJQ; Zhu HL; Zhao LJ; Zhou F; Wang LF; Wang BJ; Bian J; An X; Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. | |
| 2006 | |
| Conference Name | International Symposium on Biophotonics, Nanophotonics and Metamaterials |
| Source Publication | Proceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials |
| Pages | 284-287 |
| Conference Date | OCT 16-18, 2006 |
| Conference Place | Hangzhou, PEOPLES R CHINA |
| Publication Place | 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Publisher | IEEE |
| ISBN | 978-0-7803-9773-6 |
| metadata_83 | chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| Abstract | Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE has been studied. Both the InGaAlAs bulk waveguides and the InGaAlAs MQW waveguides were successful grown on the patterned substrates at optimized growth conditions. The mask stripe width varied from 0 to 40 mu m, while the window region width between a pair of mask stripes was fixed 2.5 mu m. These selectively grown waveguides were covered by specific InP layers, which can keep the InGaAlAs waveguides from being oxidized during the fabrication of devices. In particular, there exhibit strong dependences of the photoluminescence (PL) spectrum on the mask stripe width for the samples. The results were explained in considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD). |
| Keyword | Vapor-phase Epitaxy |
| Subject Area | 光电子学 |
| Funding Organization | Zhejiang Univ.; Royal Inst Technol.; Chinese Univ Hong Kong.; SUNY Buffalo.; IEEE LEOS. |
| Indexed By | 其他 |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/9848 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Corresponding Author | Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Feng W,Pan WWJQ,Zhu HL,et al. Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:284-287. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2275.pdf（574KB） | 限制开放 | -- | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment