| 题名: | Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE |
| 作者: | Feng W; Pan WWJQ; Zhu HL; Zhao LJ; Zhou F; Wang LF; Wang BJ; Bian J; An X |
| 出版日期: | 2006 |
| 会议日期: | OCT 16-18, 2006 |
| 摘要: | Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE has been studied. Both the InGaAlAs bulk waveguides and the InGaAlAs MQW waveguides were successful grown on the patterned substrates at optimized growth conditions. The mask stripe width varied from 0 to 40 mu m, while the window region width between a pair of mask stripes was fixed 2.5 mu m. These selectively grown waveguides were covered by specific InP layers, which can keep the InGaAlAs waveguides from being oxidized during the fabrication of devices. In particular, there exhibit strong dependences of the photoluminescence (PL) spectrum on the mask stripe width for the samples. The results were explained in considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD). |
| 会议名称: | International Symposium on Biophotonics, Nanophotonics and Metamaterials |
| KOS主题词: | Vapor phase epitaxy |
| 会议文集: | Proceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials |
| 专题: | 中国科学院半导体研究所（2009年前）_会议论文
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许可声明：条目相关作品遵循知识共享协议(Creative Commons)。
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| 推荐引用方式： | |
Feng, W (Feng, W.); Pan, WWJQ (Pan, W. Wang J. Q.); Zhu, HL (Zhu, H. L.); Zhao, LJ (Zhao, L. J.); Zhou, F (Zhou, F.); Wang, LF (Wang, L. F.); Wang, BJ (Wang, B. J.); Bian, J (Bian, J.); An, X (An, X.) .Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE .见：IEEE .Proceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials,345 E 47TH ST, NEW YORK, NY 10017 USA ,2006,284-287
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