Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE
	Feng W; Pan WWJQ; Zhu HL; Zhao LJ; Zhou F; Wang LF; Wang BJ; Bian J; An X; Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
	2006
会议名称	International Symposium on Biophotonics, Nanophotonics and Metamaterials
会议录名称	Proceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials
页码	284-287
会议日期	OCT 16-18, 2006
会议地点	Hangzhou, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-0-7803-9773-6
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE has been studied. Both the InGaAlAs bulk waveguides and the InGaAlAs MQW waveguides were successful grown on the patterned substrates at optimized growth conditions. The mask stripe width varied from 0 to 40 mu m, while the window region width between a pair of mask stripes was fixed 2.5 mu m. These selectively grown waveguides were covered by specific InP layers, which can keep the InGaAlAs waveguides from being oxidized during the fabrication of devices. In particular, there exhibit strong dependences of the photoluminescence (PL) spectrum on the mask stripe width for the samples. The results were explained in considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD).
关键词	Vapor-phase Epitaxy
学科领域	光电子学
主办者	Zhejiang Univ.; Royal Inst Technol.; Chinese Univ Hong Kong.; SUNY Buffalo.; IEEE LEOS.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9848
专题	中国科学院半导体研究所（2009年前）
通讯作者	Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Feng W,Pan WWJQ,Zhu HL,et al. Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:284-287.

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