SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE
Feng W; Pan WWJQ; Zhu HL; Zhao LJ; Zhou F; Wang LF; Wang BJ; Bian J; An X; Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
2006
Conference NameInternational Symposium on Biophotonics, Nanophotonics and Metamaterials
Source PublicationProceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials
Pages284-287
Conference DateOCT 16-18, 2006
Conference PlaceHangzhou, PEOPLES R CHINA
Publication Place345 E 47TH ST, NEW YORK, NY 10017 USA
PublisherIEEE
ISBN978-0-7803-9773-6
metadata_83chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
AbstractGrowth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE has been studied. Both the InGaAlAs bulk waveguides and the InGaAlAs MQW waveguides were successful grown on the patterned substrates at optimized growth conditions. The mask stripe width varied from 0 to 40 mu m, while the window region width between a pair of mask stripes was fixed 2.5 mu m. These selectively grown waveguides were covered by specific InP layers, which can keep the InGaAlAs waveguides from being oxidized during the fabrication of devices. In particular, there exhibit strong dependences of the photoluminescence (PL) spectrum on the mask stripe width for the samples. The results were explained in considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD).
KeywordVapor-phase Epitaxy
Subject Area光电子学
Funding OrganizationZhejiang Univ.; Royal Inst Technol.; Chinese Univ Hong Kong.; SUNY Buffalo.; IEEE LEOS.
Indexed By其他
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9848
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorFeng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Feng W,Pan WWJQ,Zhu HL,et al. Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:284-287.
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