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A novel DC-DC charge pump circuit for passive RFID transponder | |
Ha, HL (Ha, Hailong); Ni, WN (Ni, Weining); Shi, Y (Shi, Yin); Dai, FF (Dai, Foster F.); Ha, HL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. | |
2007 | |
Conference Name | International Workshop on Electron Devices and Semiconductor Technology |
Source Publication | 2007 International Workshop on Electron Devices and Semiconductor Technology |
Pages | 206-209 |
Conference Date | JUN 03-04, 2007 |
Conference Place | Beijing, PEOPLES R CHINA |
Publication Place | 345 E 47TH ST, NEW YORK, NY 10017 USA |
Publisher | IEEE |
ISBN | 978-1-4244-1097-2 |
metadata_83 | chinese acad sci, inst semicond, beijing 100083, peoples r china |
Abstract | This paper presents a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies. The proposed charge pump has been used as a part of the power supply section of fully integrated passive radio frequency identification(RFID) transponder IC, which has been implemented in a 0.35-um CMOS technology with embedded EEPROM offered by Chartered Semiconductor. The proposed DC/DC charge pump can generate stable output for RFID applications with low power dissipation and high pumping efficiency. The analytical model of the voltage multiplier, the comparison with other charge pumps, the simulation results, and the chip testing results are presented. |
Keyword | Dc/dc Charge Pump Rfid Cmos Operation Uhf |
Subject Area | 人工智能 |
Funding Organization | IEEE Electron Devices Soc. Tsinghua Univ |
Indexed By | CPCI-S |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/9834 |
Collection | 中国科学院半导体研究所(2009年前) |
Corresponding Author | Ha, HL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. |
Recommended Citation GB/T 7714 | Ha, HL ,Ni, WN ,Shi, Y ,et al. A novel DC-DC charge pump circuit for passive RFID transponder[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2007:206-209. |
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