SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
A novel DC-DC charge pump circuit for passive RFID transponder
Ha, HL (Ha, Hailong); Ni, WN (Ni, Weining); Shi, Y (Shi, Yin); Dai, FF (Dai, Foster F.); Ha, HL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
2007
Conference NameInternational Workshop on Electron Devices and Semiconductor Technology
Source Publication2007 International Workshop on Electron Devices and Semiconductor Technology
Pages206-209
Conference DateJUN 03-04, 2007
Conference PlaceBeijing, PEOPLES R CHINA
Publication Place345 E 47TH ST, NEW YORK, NY 10017 USA
PublisherIEEE
ISBN978-1-4244-1097-2
metadata_83chinese acad sci, inst semicond, beijing 100083, peoples r china
AbstractThis paper presents a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies. The proposed charge pump has been used as a part of the power supply section of fully integrated passive radio frequency identification(RFID) transponder IC, which has been implemented in a 0.35-um CMOS technology with embedded EEPROM offered by Chartered Semiconductor. The proposed DC/DC charge pump can generate stable output for RFID applications with low power dissipation and high pumping efficiency. The analytical model of the voltage multiplier, the comparison with other charge pumps, the simulation results, and the chip testing results are presented.
KeywordDc/dc Charge Pump Rfid Cmos Operation Uhf
Subject Area人工智能
Funding OrganizationIEEE Electron Devices Soc. Tsinghua Univ
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9834
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorHa, HL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Ha, HL ,Ni, WN ,Shi, Y ,et al. A novel DC-DC charge pump circuit for passive RFID transponder[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2007:206-209.
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