Synthesis of GaN nanorods with vertebra-like morphology

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	Synthesis of GaN nanorods with vertebra-like morphology
	Gao, HY (Gao, Haiyong); Li, JM (Li, Jinmin); Gao, HY, Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China.
	2006
Conference Name	IEEE International Conference of Nano/Micro Engineered and Molecular Systems
Source Publication	2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems
Pages	Vols 1-3: 196-199
Conference Date	JAN 18-21, 2006
Conference Place	Zhuhai, PEOPLES R CHINA
Publication Place	345 E 47TH ST, NEW YORK, NY 10017 USA
Publisher	IEEE
ISBN	978-1-4244-0139-0
metadata_83	chinese acad sci, inst semicond, novel mat dept, beijing 100083, peoples r china
Abstract	GaN nanorods with vertebra-like morphology were synthesized by nitriding Ga2O3/ZnO films at 1000 degrees C for 20min. Ga2O3 thin films and ZnO middle layers were pre-deposited in turn on Si(111) substrates by r.f. magnetron sputtering system. In the flowing ammonia ambient, ZnO was reducted to Zn and Zu sublimated at 1000 degrees C. Ga2O3 was reducted to Ga2O and Ga2O reacted with NH3 to synthesize GaN nanorods in the help of the sublimation of Zn. The structure and morphology of the nanorods were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), The composition of GaN nanorods was studied by energy dispersive spectroscopy (EDS) and fourier transform infrared (FTIR) system.
Keyword	Gan Nanorods Ga2o3/zno Films Nitritding Morphology Chemical-vapor-deposition Films
Subject Area	半导体材料
Funding Organization	IEEE.
Indexed By	CPCI-S
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/9824
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Gao, HY, Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China.
Recommended Citation GB/T 7714	Gao, HY ,Li, JM ,Gao, HY, Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China.. Synthesis of GaN nanorods with vertebra-like morphology[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:Vols 1-3: 196-199.

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