High-power operation of quantum cascade lasers endured prolonged air-oxidation
Shao, Y (Shao, Ye); Liu, FQ (Liu, Feng-Qi); Li, L (Li, Lu); Lu, XZ (Lu, Xiu-Zhen); Liu, JQ (Liu, Jun-Qi); Wang, ZG (Wang, Zhan-Guo); Liu, FQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
2006
会议名称Joint 31st International Conference on Infrared and Millimeter Waves/14th International Conference on Terahertz Electronics
会议录名称Conference Digest of the 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics
页码40-40
会议日期SEP 18-22, 2006
会议地点Shanghai, PEOPLES R CHINA
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN978-1-4244-0399-8
部门归属chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
摘要High-power strain-compensated In1-xGaxAs/ln(1-y)Al(y)As quantum cascade lasers (lambda similar to 5.5 mu m) are demonstrated. Peak power at least 1.2W per facet for a 32 mu mx2mm uncoated laser stored in ambient condition for 240 days, is obtained at 80 K. Considering the collection efficiency of 60%, the actual output power is 4W at this temperature.
学科领域半导体材料
主办者Chinese Acad Sci, Shanghai Inst Tech Phys.; SE Univ.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; IEEE MTT S.; IEEE Nanjing Joint Chapter.; IEEE Shanghai Sub Sect.; Shanghai Int Culture Assoc.; Chinese Phys Soc.; Chinese Opt Soc.; Chinese Inst Elect.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9804
专题中国科学院半导体研究所(2009年前)
通讯作者Liu, FQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
推荐引用方式
GB/T 7714
Shao, Y ,Liu, FQ ,Li, L ,et al. High-power operation of quantum cascade lasers endured prolonged air-oxidation[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:40-40.
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