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题名: Self-assembled GaAs quantum rings by MBE droplet epitaxy
作者: Huang, SS (Huang, Shesong);  Niu, ZC (Niu, Zhichuan);  Xia, JB (Xia, Jianbai)
出版日期: 2007
会议日期: JUN 09-11, 2005
摘要: Fabrication of semiconductor nanostructures such as quantum dots (QDs), quantum rings (QRs) has been considered as the important step for realization of solid state quantum information devices, including QDs single photon emission source, QRs single electron memory unit, etc. To fabricate GaAs quantum rings, we use Molecular Beam Epitaxy (MBE) droplet technique in this report. In this droplet technique, Gallium (Ga) molecular beams are supplied initially without Arsenic (As) ambience, forming droplet-like nano-clusters of Ga atoms on the substrate, then the Arsenic beams are supplied to crystallize the Ga droplets into GaAs crystals. Because the morphologies and dimensions of the GaAs crystal are governed by the interplay between the surface migration of Ga and As adatoms and their crystallization, the shape of the GaAs crystals can be modified into rings, and the size and density can be controlled by varying the growth temperatures and As/Ga flux beam equivalent pressures(BEPs). It has been shown by Atomic force microscope (AFM) measurements that GaAs single rings, concentric double rings and coupled double rings are grown successfully at typical growth temperatures of 200 C to 300 C under As flux (BEP) of about 1.0 x 10(-6) Torr. The diameter of GaAs rings is about 30-50 nm and thickness several nm.
会议名称: China International Conference on Nanoscience and Technology (ChinaNANO 2005)
会议文集: Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA
专题: 中国科学院半导体研究所(2009年前)_会议论文

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Huang, SS (Huang, Shesong); Niu, ZC (Niu, Zhichuan); Xia, JB (Xia, Jianbai) .Self-assembled GaAs quantum rings by MBE droplet epitaxy .见:TRANS TECH PUBLICATIONS LTD .Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA ,LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND ,2007,Pts 1 and 2 121-123: 541-544 Part 1-2
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