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题名: Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding
作者: Yang GH (Yang Guohua);  He GR (He Guorong);  Zheng WH (Zheng Wanhua);  Chen LH (Chen Lianghui)
出版日期: 2006
会议日期: SEP 05-07, 2006
摘要: A novel low temperature direct wafer bonding technology employing vacuum-cavity pre-bonding is proposed and applied in bonding of InGaAs/Si couple wafers under 300 degrees C and InP/GaAs couple wafers under 350 degrees C. Aligning accuracy of 0.5 mu m is achieved. During wafer bonding process the pressure on the couple wafers is 10MPa. The interface energy is sufficiently high to allow thinning of the wafers down from 350um to about 100um. And the tensile strength test indicates the bonding energy of bonded samples is about equal to the bonded samples at 550 degrees C.
会议名称: Conference on Optoelectronic Materials and Devices
会议文集: Optoeletronic Materials and Devices丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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Yang, GH (Yang, Guohua); He, GR (He, Guorong); Zheng, WH (Zheng, Wanhua); Chen, LH (Chen, Lianghui) .Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding .见:SPIE-INT SOC OPTICAL ENGINEERING .Optoeletronic Materials and Devices丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) ,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2006,Pts 1 and 2 6352: U1388-U1395 Part 1-2
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