Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding
Yang GH (Yang Guohua); He GR (He Guorong); Zheng WH (Zheng Wanhua); Chen LH (Chen Lianghui); Yang, GH, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
2006
会议名称Conference on Optoelectronic Materials and Devices
会议录名称Optoeletronic Materials and Devices丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
页码Pts 1 and 2 6352: U1388-U1395 Part 1-2
会议日期SEP 05-07, 2006
会议地点Gwangju, SOUTH KOREA
出版地1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者SPIE-INT SOC OPTICAL ENGINEERING
ISSN0277-786X
ISBN0-8194-6447-3
部门归属chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要A novel low temperature direct wafer bonding technology employing vacuum-cavity pre-bonding is proposed and applied in bonding of InGaAs/Si couple wafers under 300 degrees C and InP/GaAs couple wafers under 350 degrees C. Aligning accuracy of 0.5 mu m is achieved. During wafer bonding process the pressure on the couple wafers is 10MPa. The interface energy is sufficiently high to allow thinning of the wafers down from 350um to about 100um. And the tensile strength test indicates the bonding energy of bonded samples is about equal to the bonded samples at 550 degrees C.
学科领域光电子学
主办者Opt Soc Korea.; SPIE.; Korea Assoc Photon Ind Dev.; Gwangju City.; Chinese Opt Soc.; IEEE Commun Soc.; IEEE Laser & Electro Opt Soc.; Opt Soc Amer.; Opt Soc Japan.; Inst Elect Engineers Korea.; Korean Inst Commun Sci.
收录类别其他
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9770
专题中国科学院半导体研究所(2009年前)
通讯作者Yang, GH, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
推荐引用方式
GB/T 7714
Yang GH ,He GR ,Zheng WH ,et al. Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2006:Pts 1 and 2 6352: U1388-U1395 Part 1-2.
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