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题名: Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As
作者: Lu J;  Bi JF;  Wang WZ;  Gan HD;  Meng HJ;  Deng JJ;  Zheng HZ;  Zhao JH
会议日期: MAY 04-08, 2008
摘要: We report the influence of growth parameters and post-growth annealing on the structural characterizations and magnetic properties of (Ga, Cr)As films. The crystalline quality and magnetic properties are sensitive to the growth conditions. The single-phase (Ga, Cr)As film with the Curie temperature of 10 K is synthesized at growth temperature T-s = 250 degrees C and with nominal Cr content x = 0.016. However, for the films with x > 0.02, the aggregation of Cr atoms is strongly enhanced as both T. and x increase, which not only brings strong compressive strain in the epilayer, but also roughens the surface. The origin of room-temperature ferromagnetism in (Ga, Cr)As films with nanoclusters is also discussed.
会议名称: International Magnetics Conference (Intermag)
会议文集: IEEE TRANSACTIONS ON MAGNETICS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Lu, J;Bi, JF;Wang, WZ;Gan, HD;Meng, HJ;Deng, JJ;Zheng, HZ;Zhao, JH.Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As .见:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC .IEEE TRANSACTIONS ON MAGNETICS,445 HOES LANE, PISCATAWAY, NJ 08855 USA ,39753,44 (11): 2692-2695 Part 1 NOV
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