Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer
	Cheng BW; Xue HY; Hu D; Han GQ; Zeng YG; Bai AQ; Xue CL; Luo LP; Zuo YH; Wang QM; Cheng, BW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
	2008
会议名称	5th IEEE International Conference on Group IV Photonics
会议录名称	2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS
页码	: 140-142
会议日期	SEP 17-19, 2008
会议地点	Sorrento, ITALY
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-1769-8
部门归属	[cheng, b. w.; xue, h. y.; hu, d.; han, g. q.; zeng, y. g.; bai, a. q.; xue, c. l.; luo, l. p.; zuo, y. h.; wang, q. m.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290 degrees C. On the low temperature Ge buffer layer with pits, high quality Ge layer was grown at 600 degrees C with a threading dislocation density of similar to 1x10(5)cm(-2). According to channeling and random Rutherford backscattering spectrometry spectra, a chi(min) value of 10% and 3.9% was found, respectively, at the Ge/Si interface and immediately under the surface peak. The root-mean-square surface roughness of Ge film was 0.33nm.
关键词	Sige/si(100) Epitaxial-films
学科领域	光电子学
主办者	IEEE.; Informat Soc Technol.; Helios.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8342
专题	中国科学院半导体研究所（2009年前）
通讯作者	Cheng, BW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Cheng BW,Xue HY,Hu D,et al. Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:: 140-142.

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