Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films
	Zhao L; Lu ZX; Cheng CJ; Zhao DG; Zhu JJ; Sun BJ; Qu B; Zhang XF; Sun WG; Zhao, L, Luoyang Optoelect Inst, Luoyang, Peoples R China.
	2009
会议名称	International Materials Research Conference
会议录名称	MATERIALS RESEARCH
页码	PTS 1 AND 2,610-613,: 598-603 Part 1-2
会议日期	JUN 09-12, 2008
会议地点	Chongqing, PEOPLES R CHINA
出版地	LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISSN	0255-5476
部门归属	[zhao, lan; lu, zhengxiong; cheng, caijing; zhang, xiangfeng; sun, weiguo] luoyang optoelect inst, luoyang, peoples r china; [zhao, degang; zhu, jianjun; sun, baojuan] chinese acad sci, inst semicond, beijing 100083, peoples r china; [qu, bo] jordan valley semicond uk ltd, durham, england
摘要	The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.
关键词	Alxga1-xn
学科领域	半导体材料
主办者	Mat Res Soc.; Chinese Mat Res Soc.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8312
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao, L, Luoyang Optoelect Inst, Luoyang, Peoples R China.
推荐引用方式 GB/T 7714	Zhao L,Lu ZX,Cheng CJ,et al. Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films[C]. LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2009:PTS 1 AND 2,610-613,: 598-603 Part 1-2.

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