A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics
	Wang, LS; Zhao, LJ; Pan, JQ; Zhang, W; Wang, H; Liang, S; Zhu, HL; Wang, W; Wang, LS, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
	2008
会议名称	IEEE PhotonicsGlobal at Singapore
会议录名称	2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC)
页码	VOLS 1 AND 2: 671-673
会议日期	DEC 08-11, 2008
会议地点	Singapore, SINGAPORE
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-3901-0
部门归属	[wang, l. s.; zhao, l. j.; pan, j. q.; zhang, w.; wang, h.; liang, s.; zhu, h. l.; wang, w.] chinese acad sci, key lab semicond mat sci, inst semicond, beijing 100083, peoples r china
摘要	A new ECTT-DHPT with InGaAsP(lambda=1.55 mu m) as base and InGaAsP(lambda=1.3 mu m) as collector as well as waveguide was designed and fabricated, the DC characteristics reveal that the ECTT-DRPT can perform good optoelectronic mix operation and linear amplification operation by optically biased at two appropriate value respectively. Responsivity of more than 52A/W and dark current of 70nA (when V-ce=1V) were obtained.
关键词	P-i-n/hbt Wave-guide Inp/ingaas Frequency Hbt
学科领域	光电子学
主办者	IEEE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8262
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang, LS, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wang, LS,Zhao, LJ,Pan, JQ,et al. A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1 AND 2: 671-673.

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