Knowledge Management System Of Institute of Semiconductors,CAS
Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures | |
Du GX; Babu MR; Han XF; Deng JJ; Wang WZ; Zhao JH; Wang WD; Tang JK; Han, XF, Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, State Key Lab Magnetism, POB 603, Beijing 100080, Peoples R China. | |
2009 | |
会议名称 | 53rd Annual Conference on Magnetism and Magnetic Materials |
会议录名称 | JOURNAL OF APPLIED PHYSICS |
页码 | 105 (7): Art. No. 07C707 APR 1 |
会议日期 | NOV 11-14, 2008 |
会议地点 | Austin, TX |
出版地 | CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA |
出版者 | AMER INST PHYSICS |
ISSN | 0021-8979 |
部门归属 | [du, g. x.; babu, m. ramesh; han, x. f.] chinese acad sci, inst phys, beijing natl lab condensed matter phys, state key lab magnetism, beijing 100080, peoples r china; [deng, j. j.; wang, w. z.; zhao, j. h.] chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china; [wang, w. d.; tang, jinke] univ wyoming, dept phys & astron, laramie, wy 82071 usa |
摘要 | Tunneling magnetoresistance (TMR) in Ga(0.9)2Mn(0.08)As/Al-O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field vertical bar H vertical bar <= 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 mu A. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3068418] |
关键词 | Spin Injection |
学科领域 | 半导体物理 |
主办者 | Phys Conf Inc.; Magnet Soc IEEE. |
收录类别 | 其他 |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/8254 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Han, XF, Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, State Key Lab Magnetism, POB 603, Beijing 100080, Peoples R China. |
推荐引用方式 GB/T 7714 | Du GX,Babu MR,Han XF,et al. Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures[C]. CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA:AMER INST PHYSICS,2009:105 (7): Art. No. 07C707 APR 1. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
264.pdf(329KB) | 限制开放 | -- | 请求全文 |
个性服务 |
推荐该条目 |
保存到收藏夹 |
查看访问统计 |
导出为Endnote文件 |
谷歌学术 |
谷歌学术中相似的文章 |
[Du GX]的文章 |
[Babu MR]的文章 |
[Han XF]的文章 |
百度学术 |
百度学术中相似的文章 |
[Du GX]的文章 |
[Babu MR]的文章 |
[Han XF]的文章 |
必应学术 |
必应学术中相似的文章 |
[Du GX]的文章 |
[Babu MR]的文章 |
[Han XF]的文章 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论