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题名: High speed silicon optical switches based on carrier depletion - art. no. 67812D
作者: Li ZY;  Yu JZ;  Chen SW;  Wang QM
出版日期: 2007
会议日期: NOV 02-05, 2007
摘要: The novel design of a silicon optical switch on the mechanism of a reverse p-n junction is proposed. The figuration of contact regions at slab waveguides and the ion implantation technology for creation of junctions are employed in the new design. The two-layer rib structure is helpful for reduction of optical absorption losses induced by metal and heavily-doped contact. And more, simulation results show that the index modulation efficiency of Mach-Zehnder interferometer enhances as the concentrations of dopants in junctions increase, while the trade-off of absorption loss is less than 3 dB/mu m. The phase shift reaches about 5 x 10(-4) pi/mu m at a reverse bias of 10V with the response time of about 0.2ns. The preliminary experimental results are presented. The frequency bandwidth of modulation operation can arrive in the range of GHz. However, heavily-doped contacts have an important effect on pulse response of these switches. While the contact region is not heavily-doped, that means metal electrodes have schottky contacts with p-n junctions, the operation bandwidth of the switch is limited to about 1GHz. For faster response, the heavily-doped contacts must be considered in the design.
会议名称: Conference on Passive Components and Fiber-Based Devices IV
KOS主题词: Acoustooptical devices
会议文集: PASSIVE COMPONENTS AND FIBER-BASED DEVICES IV
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Li, ZY ; Yu, JZ ; Chen, SW ; Wang, QM .High speed silicon optical switches based on carrier depletion - art. no. 67812D .见:SPIE-INT SOC OPTICAL ENGINEERING .PASSIVE COMPONENTS AND FIBER-BASED DEVICES IV,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2007,PTS 1 AND 2,6781: D7812-D7812 Part 1-2
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