High speed silicon optical switches based on carrier depletion - art. no. 67812D

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	High speed silicon optical switches based on carrier depletion - art. no. 67812D
	Li ZY; Yu JZ; Chen SW; Wang QM; Li, ZY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
	2007
会议名称	Conference on Passive Components and Fiber-Based Devices IV
会议录名称	PASSIVE COMPONENTS AND FIBER-BASED DEVICES IV
页码	PTS 1 AND 2,6781: D7812-D7812 Part 1-2
会议日期	NOV 02-05, 2007
会议地点	Wuhan, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	978-0-8194-6944-1
部门归属	[li, zhiyong; yu, jinzhong; chen, shaowu; wang, qiming] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	The novel design of a silicon optical switch on the mechanism of a reverse p-n junction is proposed. The figuration of contact regions at slab waveguides and the ion implantation technology for creation of junctions are employed in the new design. The two-layer rib structure is helpful for reduction of optical absorption losses induced by metal and heavily-doped contact. And more, simulation results show that the index modulation efficiency of Mach-Zehnder interferometer enhances as the concentrations of dopants in junctions increase, while the trade-off of absorption loss is less than 3 dB/mu m. The phase shift reaches about 5 x 10(-4) pi/mu m at a reverse bias of 10V with the response time of about 0.2ns. The preliminary experimental results are presented. The frequency bandwidth of modulation operation can arrive in the range of GHz. However, heavily-doped contacts have an important effect on pulse response of these switches. While the contact region is not heavily-doped, that means metal electrodes have schottky contacts with p-n junctions, the operation bandwidth of the switch is limited to about 1GHz. For faster response, the heavily-doped contacts must be considered in the design.
关键词	Optical Switches
学科领域	光电子学
主办者	Chinese Opt Soc.; SPIE.; China Inst Commun.; Peoples Govt Wuhan Municipal.; Wuhan Natl Lab Optoelect.; Product Promot Ctr Wuhan E Lake Hi-Tech Dev Zone.; Wuhan Res Inst Posts & Telecommun.; State Optelect & Informat Ind Base China.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7874
专题	中国科学院半导体研究所（2009年前）
通讯作者	Li, ZY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Li ZY,Yu JZ,Chen SW,et al. High speed silicon optical switches based on carrier depletion - art. no. 67812D[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2007:PTS 1 AND 2,6781: D7812-D7812 Part 1-2.

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