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题名: Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N
作者: Zhao LJ;  Zhang J;  Wang L;  Cheng YB;  Pan JQ;  Liu HB;  Zhu HL;  Zhou F;  Bian J;  Wang BJ;  Zhu NH;  Wei W
出版日期: 2008
会议日期: NOV 12-13, 2007
摘要: Wavelength tunable electro-absorption modulated distributed Bragg reflector lasers (TEMLs) are promising light source in dense wavelength division multiplexing (DWDM) optical fiber communication system due to high modulation speed, small chirp, low drive voltage, compactness and fast wavelength tuning ability. Thus, increased the transmission capacity, the functionality and the flexibility are provided. Materials with bandgap difference as large as 250nm have been integrated on the same wafer by a combined technique of selective area growth (SAG) and quantum well intermixing (QWI), which supplies a flexible and controllable platform for the need of photonic integrated circuits (PIC). A TEML has been fabricated by this technique for the first time. The component has superior characteristics as following: threshold current of 37mA, output power of 3.5mW at 100mA injection and 0V modulator bias voltage, extinction ratio of more than 20 dB with modulator reverse voltage from 0V to 2V when coupled into a single mode fiber, and wavelength tuning range of 4.4nm covering 6 100-GHz WDM channels. A clearly open eye diagram is observed when the integrated EAM is driven with a 10-Gb/s electrical NRZ signal. A good transmission characteristic is exhibited with power penalties less than 2.2 dB at a bit error ratio (BER) of 10(-10) after 44.4 km standard fiber transmission.
会议名称: Conference on Semiconductor Lasers and Applications III
KOS主题词: Tunable lasers
会议文集: SEMICONDUCTOR LASERS AND APPLICATIONS III
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zhao, LJ ; Zhang, J ; Wang, L ; Cheng, YB ; Pan, JQ ; Liu, HB ; Zhu, HL ; Zhou, F ; Bian, J ; Wang, BJ ; Zhu, NH ; Wei, W .Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N .见:SPIE-INT SOC OPTICAL ENGINEERING .SEMICONDUCTOR LASERS AND APPLICATIONS III,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2008,6824: N8240-N8240
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