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题名: Advances in high power semiconductor diode lasers - art. no. 682402
作者: Ma, XY;  Zhong, L
出版日期: 2008
会议日期: NOV 12-13, 2007
摘要: High power semiconductor lasers have broad applications in the fields of military and industry. Recent advances in high power semiconductor lasers are reviewed mainly in two aspects: improvements of diode lasers performance and optimization of packaging architectures of diode laser bars. Factors which determine the performance of diode lasers, such as power conversion efficiency, temperature of operation, reliability, wavelength stabilization etc., result from a combination of new semiconductor materials, new diode structures, careful material processing of bars. the latest progress of today's high-power diode lasers at home and abroad is briefly discussed and typical data are presented. The packaging process is of decisive importance for the applicability of high-power diode laser bars, not only technically but also economically. The packaging techniques include the material choosing and the structure optimizing of heat-sinks, the bonding between the array and the heat-sink, the cooling and the fiber coupling, etc. The status of packaging techniques is stressed. There are basically three different diode package architectural options according to the integration grade. Since the package design is dominated by the cooling aspect,. different effective cooling techniques are promoted by different package architectures and specific demands. The benefit and utility of each package are strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made. Modularity of package for special application requirements is an important developing tendency for high power diode lasers.
会议名称: Conference on Semiconductor Lasers and Applications III
KOS主题词: Semiconductor lasers;  Chimneys;  Reliability;  Packaging
会议文集: SEMICONDUCTOR LASERS AND APPLICATIONS III
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Ma, XY ; Zhong, L .Advances in high power semiconductor diode lasers - art. no. 682402 .见:SPIE-INT SOC OPTICAL ENGINEERING .SEMICONDUCTOR LASERS AND APPLICATIONS III,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2008,6824: 82402-82402
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