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题名: Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R
作者: Wang, XH;  Wan, XL;  Xiao, HL;  Feng, C;  Way, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM
出版日期: 2008
会议日期: NOV 12-14, 2007
摘要: Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H-2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860 degrees C for 30 s in N-2 ambience. Both the forward and reverse current of the device increased greatly when exposed to H-2 gas. The sensor's responses under different hydrogen concentrations from 500ppm to 10% H-2 in N-2 at 300K were investigated. A shift of 0.45V at 297K is obtained at a fixed forward current for switching from N-2 to 10% H-2 in N-2. Time response of the sensor at a fixed bias of 0.5 V was also measured. The turn-on response of the device was rapid, while the recovery of the sensor at N-2 atmosphere was rather slow. But it recovered quickly when the device was exposed to the air. The decrease in the barrier height of the diode was calculated to be about 160meV upon introduction of 10% H-2 into the ambient. The sensitivity of the sensor is also calculated. Some thermodynamics analyses have been done according to the Langmuir isotherm equation.
会议名称: Conference on Advanced Materials and Devices for Sensing and Imaging III
会议文集: ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Wang, XH ; Wan, XL ; Xiao, HL ; Feng, C ; Way, BZ ; Yang, CB ; Wang, JX ; Wang, CM ; Ran, JX ; Hu, GX ; Li, JM .Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R .见:SPIE-INT SOC OPTICAL ENGINEERING .ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2008,6829: R8291-R8291
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