AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S
	Liu, NX; Yan, JC; Liu, Z; Ma, P; Wang, JX; Li, JM; Liu, NX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
	2008
会议名称	Conference on Solid State Lighting and Solar Energy Technologies
会议录名称	SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES
页码	6841: S8410-S8410
会议日期	NOV 12-14, 2007
会议地点	Beijing, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	978-0-8194-7016-4
部门归属	[liu, n. x.; yan, j. c.; liu, z.; ma, p.; wang, j. x.; li, j. m.] chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	We investigated AlGaN layers grown by metalorganic chemical vapor deposition (MOCVD) on high temperature (HT-)GaN and AlGaN buffer layers. On GaN buffer layer, there are a lot of surface cracking because of tensile strain in subsequent AlGaN epilayers. On HT-AlGaN buffer layer, not only cracks but also high densities rounded pits present, which is related to the high density of coalescence boundaries in HT-AlGaN growth process.The insertion of interlayer (IL) between AlGaN and the GaN pseudosubstrate can not only avoid cracking by modifying the strain status of the epilayer structure, but also improved Al incorporation efficiency and lead to phase-separation. And we also found the growth temperature of IL is a critical parameter for crystalline quality of subsequent AlGaN epilayer. Low temperature (LT-) A1N IL lead to a inferior quality in subsequent AlGaN epilayers.
关键词	Algan Ht-algan Buffer Ht-interlayers Ultraviolet (Uv) Led
学科领域	光电子学
主办者	SPIE.; Chinese Opt Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7830
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liu, NX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Liu, NX,Yan, JC,Liu, Z,et al. AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2008:6841: S8410-S8410.

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