高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 会议论文

题名: Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes
作者: Zhou, W;  Yang, JL;  Sun, GS;  Liu, XF;  Yang, FH;  Li, JM
出版日期: 2008
会议日期: JAN 06-09, 2008
摘要: The mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates were characterized using bulge testing combined with a refined load-deflection model for long rectangular membranes. Plane-strain modulus E-ps, prestress so, and fracture strength s(max) for 3C-SiC thin films with thickness of 0.40 mu m and 1.42 mu m were extracted. The E, values of SiC are strongly dependent on grain orientation. The thicker SIC film presents lower so than the thinner film due to stress relaxation. The s(max) values decrease with increasing film thickness. The statistical analysis of the fracture strength data were achieved by Weibull distribution function and the fracture origins were predicted.
会议名称: 3rd IEEE International Conference of Nano/Micro Engineered and Molecular Systems
KOS主题词: Silicon-carbide thin films
会议文集: 2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS
专题: 中国科学院半导体研究所(2009年前)_会议论文

条目包含的文件

文件 大小格式
659.pdf511KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Zhou, W ; Yang, JL ; Sun, GS ; Liu, XF ; Yang, FH ; Li, JM .Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes .见:IEEE .2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS ,345 E 47TH ST, NEW YORK, NY 10017 USA ,2008,VOLS 1-3: 530-533
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Zhou, W]的文章
 [Yang, JL]的文章
 [Sun, GS]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Zhou, W]的文章
 [Yang, JL]的文章
 [Sun, GS]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发