Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator
	Geng, MM; Jia, LX; Zhang, L; Yang, L; Liu, YL; Li, F; Geng, MM, Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, POB 912, Beijing 100083, Peoples R China.
	2008
会议名称	2nd IEEE International Nanoelectronics Conference
会议录名称	2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE
页码	VOLS 1-3: 624-626
会议日期	MAR 24-27, 2008
会议地点	Shanghai, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-1572-4
部门归属	[geng, minming; jia, lianxi; zhang, lei; yang, lin; liu, yuliang] chinese acad sci, inst semicond, optoelect syst lab, beijing 100083, peoples r china
摘要	Polarization-independent laterally-coupled micro-ring resonator has been designed and demonstrated. The origin of the polarization-sensitivity of the photonic wire waveguide (PWW) was analyzed. A polarization-insensitive PWW structure was designed and a polarization-insensitive MRR based on this PWW structure was designed by finite difference time-domain method and was fabricated on an 8-inch silicon-on-insulator wafer. The offset between the resonant wavelengths of the quasi-TE mode and the quasi-TM mode is smaller than 0.15 nm. The FSR is about 17 nm, extinction ratio about 10 dB and Q about 620.
关键词	Wave-guides Devices Design
学科领域	半导体材料
主办者	IEEE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7752
专题	中国科学院半导体研究所（2009年前）
通讯作者	Geng, MM, Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Geng, MM,Jia, LX,Zhang, L,et al. Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-3: 624-626.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
648.pdf（607KB）			限制开放	--	请求全文