Advanced   Register
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 专利

title: 具有布拉格反射器的n+/p型高抗辐照GaAs太阳电池
author: 白一鸣;  陈诺夫;  戴瑞烜;  王鹏;  王晓东
metadata_47: 2007-4-4
Appears in Collections:半导体研究所机构知识库_专利

Files in This Item:

File SizeFormat
full/200510105263.pdf515KbAdobe PDF 联系获取全文


Permission Statement: All products of this item follow the Knowledge sharing protocol (Creative Commons)


Recommended Citation:
白一鸣;陈诺夫;戴瑞烜;王鹏;王晓东,具有布拉格反射器的n+/p型高抗辐照GaAs太阳电池 ,200510105263,20050928
Service
 Recommend this item
 Sava as my favorate item
 Show this item's statistics
 Export Endnote File
Google Scholar
 Similar articles in Google Scholar
 [白一鸣]'s Articles
 [陈诺夫]'s Articles
 [戴瑞烜]'s Articles
CSDL cross search
 Similar articles in CSDL Cross Search
 [白一鸣]‘s Articles
 [陈诺夫]‘s Articles
 [戴瑞烜]‘s Articles
Scirus search
 Similar articles in Scirus
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0! Copyright © 2007-2012  中国科学院半导体研究所  -Feedback
Technical Support Lanzhou Branch of National Science Library, Chinese Academy of Sciences
Based on DSpace by MIT and Hewlett-Packard